Infineon IPL Type N-Channel MOSFET, 300 A, 40 V Enhancement, 8-Pin HSOF IPLU300N04S41R1XTMA1
- RS Stock No.:
- 214-9081
- Mfr. Part No.:
- IPLU300N04S41R1XTMA1
- Manufacturer:
- Infineon
The image is for reference only, please refer to product details and specifications
Bulk discount available
Subtotal (1 pack of 5 units)*
HK$148.90
FREE delivery for orders over HK$250.00
Last RS stock
- Final 2,000 unit(s), ready to ship from another location
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 5 | HK$29.78 | HK$148.90 |
| 10 - 95 | HK$28.88 | HK$144.40 |
| 100 - 245 | HK$28.00 | HK$140.00 |
| 250 - 495 | HK$27.20 | HK$136.00 |
| 500 + | HK$26.36 | HK$131.80 |
*price indicative
- RS Stock No.:
- 214-9081
- Mfr. Part No.:
- IPLU300N04S41R1XTMA1
- Manufacturer:
- Infineon
Specifications
Legislation and Compliance
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 300A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | IPL | |
| Package Type | HSOF | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 1.15mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 300W | |
| Typical Gate Charge Qg @ Vgs | 116nC | |
| Forward Voltage Vf | 1.3V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Height | 4.4mm | |
| Length | 10.1mm | |
| Width | 10.58 mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 300A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series IPL | ||
Package Type HSOF | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 1.15mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 300W | ||
Typical Gate Charge Qg @ Vgs 116nC | ||
Forward Voltage Vf 1.3V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Height 4.4mm | ||
Length 10.1mm | ||
Width 10.58 mm | ||
Automotive Standard AEC-Q101 | ||
Related links
- Infineon IPL Type N-Channel MOSFET 40 V Enhancement, 8-Pin HSOF
- Infineon IAUT Type N-Channel MOSFET 80 V Enhancement, 8-Pin HSOF
- Infineon OptiMOS 5 Type N-Channel MOSFET 60 V Enhancement, 8-Pin HSOF IPT007N06NATMA1
- Infineon OptiMOS 5 Type N-Channel MOSFET 60 V Enhancement, 8-Pin HSOF
- Infineon OptiMOS 5 Type N-Channel MOSFET 100 V Enhancement, 8-Pin HSOF
- Infineon OptiMOS 3 Type N-Channel MOSFET 100 V Enhancement, 8-Pin HSOF
- Infineon IAUT Type N-Channel MOSFET 80 V Enhancement, 8-Pin HSOF IAUT300N08S5N012ATMA2
- Infineon OptiMOS 3 Type N-Channel MOSFET 100 V Enhancement, 8-Pin HSOF IPT020N10N3ATMA1