Infineon OptiMOS 5 Type N-Channel MOSFET, 300 A, 60 V Enhancement, 8-Pin HSOF IPT007N06NATMA1

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HK$96.80

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Units
Per unit
Per Pack*
2 - 498HK$48.40HK$96.80
500 - 998HK$47.20HK$94.40
1000 +HK$46.50HK$93.00

*price indicative

Packaging Options:
RS Stock No.:
906-4407
Mfr. Part No.:
IPT007N06NATMA1
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

300A

Maximum Drain Source Voltage Vds

60V

Package Type

HSOF

Series

OptiMOS 5

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

1mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

216nC

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

375W

Forward Voltage Vf

1V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Length

10.58mm

Height

2.4mm

Width

10.1 mm

Standards/Approvals

No

Automotive Standard

No

RoHS Status: Exempt

Infineon OptiMOS™5 Power MOSFETs


MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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