Vishay E Type N-Channel MOSFET, 13 A, 800 V Enhancement, 3-Pin TO-247
- RS Stock No.:
- 210-4983
- Mfr. Part No.:
- SIHG15N80AE-GE3
- Manufacturer:
- Vishay
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Bulk discount available
Subtotal (1 tube of 25 units)*
HK$424.70
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Units | Per unit | Per Tube* |
|---|---|---|
| 25 - 25 | HK$16.988 | HK$424.70 |
| 50 - 75 | HK$16.62 | HK$415.50 |
| 100 + | HK$16.248 | HK$406.20 |
*price indicative
- RS Stock No.:
- 210-4983
- Mfr. Part No.:
- SIHG15N80AE-GE3
- Manufacturer:
- Vishay
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 13A | |
| Maximum Drain Source Voltage Vds | 800V | |
| Package Type | TO-247 | |
| Series | E | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 304mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 35nC | |
| Forward Voltage Vf | 1.2V | |
| Maximum Power Dissipation Pd | 156W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Height | 4.6mm | |
| Length | 28.6mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 13A | ||
Maximum Drain Source Voltage Vds 800V | ||
Package Type TO-247 | ||
Series E | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 304mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 35nC | ||
Forward Voltage Vf 1.2V | ||
Maximum Power Dissipation Pd 156W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Height 4.6mm | ||
Length 28.6mm | ||
Automotive Standard No | ||
The Vishay E Series Power MOSFET has TO-247AC package type with 13 A drain current.
Low figure-of-merit (FOM) Ron x Qg
Low effective capacitance (Co(er))
Reduced switching and conduction losses
Avalanche energy rated (UIS)
Related links
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