DiodesZetex DMN10 N-Channel MOSFET, 3.7 A, 100 V Enhancement, 8-Pin PowerDI3333 DMN10H170SFGQ-7

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HK$161.00

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Units
Per unit
Per Pack*
25 - 475HK$6.44HK$161.00
500 - 975HK$6.28HK$157.00
1000 +HK$6.18HK$154.50

*price indicative

Packaging Options:
RS Stock No.:
206-0073
Mfr. Part No.:
DMN10H170SFGQ-7
Manufacturer:
DiodesZetex
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Brand

DiodesZetex

Channel Type

N

Product Type

MOSFET

Maximum Continuous Drain Current Id

3.7A

Maximum Drain Source Voltage Vds

100V

Series

DMN10

Package Type

PowerDI3333

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

133mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20V

Forward Voltage Vf

1V

Typical Gate Charge Qg @ Vgs

26.7nC

Maximum Power Dissipation Pd

2W

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Width

3.25mm

Standards/Approvals

No

Height

750μm

Length

3.25mm

Automotive Standard

AEC-Q101

COO (Country of Origin):
CN
The DiodesZetex 100V complementary pair enhancement mode MOSFET is designed to meet the stringent requirements of automotive application. It is qualified to AEC-Q101, supported by a PPAP, and is ideal for use in motor control and power management function.

Low RDS(ON) – ensures on state losses are minimized

Small form factor thermally efficient package

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