DiodesZetex DMN10 Type N-Channel MOSFET, 3.7 A, 100 V Enhancement, 8-Pin PowerDI3333
- RS Stock No.:
- 206-0072
- Mfr. Part No.:
- DMN10H170SFGQ-7
- Manufacturer:
- DiodesZetex
The image is for reference only, please refer to product details and specifications
Bulk discount available
Subtotal (1 reel of 2000 units)*
HK$5,436.00
FREE delivery for orders over HK$250.00
In Stock
- Plus 4,000 unit(s) shipping from 16 March 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 2000 - 2000 | HK$2.718 | HK$5,436.00 |
| 4000 - 6000 | HK$2.636 | HK$5,272.00 |
| 8000 + | HK$2.557 | HK$5,114.00 |
*price indicative
- RS Stock No.:
- 206-0072
- Mfr. Part No.:
- DMN10H170SFGQ-7
- Manufacturer:
- DiodesZetex
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 3.7A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | PowerDI3333 | |
| Series | DMN10 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 133mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 26.7nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 2W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 1V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Height | 0.75mm | |
| Width | 3.25 mm | |
| Length | 3.25mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 3.7A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type PowerDI3333 | ||
Series DMN10 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 133mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 26.7nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 2W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 1V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Height 0.75mm | ||
Width 3.25 mm | ||
Length 3.25mm | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- CN
The DiodesZetex 100V complementary pair enhancement mode MOSFET is designed to meet the stringent requirements of automotive application. It is qualified to AEC-Q101, supported by a PPAP, and is ideal for use in motor control and power management function.
Low RDS(ON) – ensures on state losses are minimized
Small form factor thermally efficient package
Related links
- DiodesZetex DMN10 Type N-Channel MOSFET 100 V Enhancement, 8-Pin PowerDI3333 DMN10H170SFGQ-7
- DiodesZetex Type N-Channel MOSFET 30 V Enhancement, 8-Pin PowerDI3333-8
- DiodesZetex Type N-Channel MOSFET 12 V Enhancement, 8-Pin PowerDI3333-8
- DiodesZetex DMTH Type N-Channel MOSFET 100 V Enhancement, 8-Pin PowerDI3333
- DiodesZetex DMTH Type N-Channel MOSFET 40 V Enhancement, 8-Pin PowerDI3333
- DiodesZetex DMTH43 Type N-Channel MOSFET 40 V Enhancement, 8-Pin PowerDI3333
- DiodesZetex DMG7430 Type N-Channel MOSFET 30 V Enhancement, 8-Pin PowerDI3333
- DiodesZetex DMT Type N-Channel MOSFET 60 V Enhancement, 8-Pin PowerDI3333