Vishay SiJ462ADP Type N-Channel MOSFET, 39.3 A, 60 V Enhancement, 4-Pin SO-8 SiJ462ADP-T1-GE3
- RS Stock No.:
- 204-7215
- Mfr. Part No.:
- SiJ462ADP-T1-GE3
- Manufacturer:
- Vishay
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Bulk discount available
Subtotal (1 pack of 20 units)*
HK$194.00
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Units | Per unit | Per Pack* |
|---|---|---|
| 20 - 740 | HK$9.70 | HK$194.00 |
| 760 - 1480 | HK$9.455 | HK$189.10 |
| 1500 + | HK$9.31 | HK$186.20 |
*price indicative
- RS Stock No.:
- 204-7215
- Mfr. Part No.:
- SiJ462ADP-T1-GE3
- Manufacturer:
- Vishay
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 39.3A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | SiJ462ADP | |
| Package Type | SO-8 | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 7.2mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 22.3W | |
| Typical Gate Charge Qg @ Vgs | 30nC | |
| Forward Voltage Vf | 1.1V | |
| Maximum Operating Temperature | 150°C | |
| Length | 5.25mm | |
| Height | 6.25mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 39.3A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series SiJ462ADP | ||
Package Type SO-8 | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 7.2mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 22.3W | ||
Typical Gate Charge Qg @ Vgs 30nC | ||
Forward Voltage Vf 1.1V | ||
Maximum Operating Temperature 150°C | ||
Length 5.25mm | ||
Height 6.25mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Vishay N-Channel 60 V (D-S) MOSFET has a very low Qg and Qoss reduce power loss and improve efficiency. It's flexible leads provide resilience to mechanical stress.
TrenchFET Gen IV power MOSFET
100 % Rg and UIS tested
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