Vishay TrenchFET Type N-Channel MOSFET, 81.2 A, 40 V Enhancement, 4-Pin SO-8 SIJA74DP-T1-GE3

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Subtotal (1 pack of 10 units)*

HK$60.81

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Units
Per unit
Per Pack*
10 - 40HK$6.081HK$60.81
50 - 90HK$5.971HK$59.71
100 - 240HK$5.864HK$58.64
250 - 990HK$5.759HK$57.59
1000 +HK$5.655HK$56.55

*price indicative

Packaging Options:
RS Stock No.:
228-2892
Mfr. Part No.:
SIJA74DP-T1-GE3
Manufacturer:
Vishay
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Brand

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

81.2A

Maximum Drain Source Voltage Vds

40V

Package Type

SO-8

Series

TrenchFET

Mount Type

Surface

Pin Count

4

Maximum Drain Source Resistance Rds

3.99mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

27nC

Maximum Power Dissipation Pd

46.2W

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Standards/Approvals

No

Automotive Standard

No

The Vishay TrenchFET N-channel is 40 V MOSFET.

100 % Rg and UIS tested

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