Vishay TrenchFET Type N-Channel MOSFET, 113 A, 45 V Enhancement, 4-Pin SO-8

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Subtotal (1 reel of 3000 units)*

HK$17,745.00

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Units
Per unit
Per Reel*
3000 - 12000HK$5.915HK$17,745.00
15000 +HK$5.797HK$17,391.00

*price indicative

RS Stock No.:
228-2886
Mfr. Part No.:
SiJ450DP-T1-GE3
Manufacturer:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

113A

Maximum Drain Source Voltage Vds

45V

Series

TrenchFET

Package Type

SO-8

Mount Type

Surface

Pin Count

4

Maximum Drain Source Resistance Rds

1.9mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

48W

Typical Gate Charge Qg @ Vgs

75.5nC

Maximum Operating Temperature

150°C

Standards/Approvals

No

Automotive Standard

No

The Vishay TrenchFET N-channel is 45 V MOSFET.

100 % Rg and UIS tested

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