Specifications

Product overview and Technical data sheets

Legislation and Compliance

Product Details

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Select all	Attribute	Value
	Brand	onsemi
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	84A
	Maximum Drain Source Voltage Vds	1200V
	Series	NTH
	Package Type	TO-247
	Mount Type	Through Hole
	Pin Count	4
	Maximum Drain Source Resistance Rds	28mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	3.7V
	Maximum Power Dissipation Pd	510W
	Typical Gate Charge Qg @ Vgs	220nC
	Maximum Operating Temperature	175°C
	Standards/Approvals	No
	Length	18.62mm
	Height	15.2mm
	Automotive Standard	No

	Select all
	Brand onsemi
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 84A
	Maximum Drain Source Voltage Vds 1200V
	Series NTH
	Package Type TO-247
	Mount Type Through Hole
	Pin Count 4
	Maximum Drain Source Resistance Rds 28mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Forward Voltage Vf 3.7V
	Maximum Power Dissipation Pd 510W
	Typical Gate Charge Qg @ Vgs 220nC
	Maximum Operating Temperature 175°C
	Standards/Approvals No
	Length 18.62mm
	Height 15.2mm
	Automotive Standard No

Datasheet - NTH4L020N120SC1

Silicon Carbide (SiC) MOSFET - EliteSiC, 20 mohm, 1200 V, M1, TO-247-4L Silicon Carbide (SiC) MOSFET - EliteSiC, 20 mohm, 1200 V, M1, TO-247-4L

The ON Semiconductor Silicon Carbide Power MOSFET runs with 102 Ampere and 1200 Volts. It can be used in uninterruptible power supply, DC or DC converter, Boost inverter.

20mO drain to source on resistance

Ultra low gate charge

100% avalanche tested

Pb free

RoHS compliant

onsemi NTH Type N-Channel MOSFET, 84 A, 1200 V Enhancement, 4-Pin TO-247 NTH4L020N120SC1

Silicon Carbide (SiC) MOSFET - EliteSiC, 20 mohm, 1200 V, M1, TO-247-4L Silicon Carbide (SiC) MOSFET - EliteSiC, 20 mohm, 1200 V, M1, TO-247-4L

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