onsemi NTH Type N-Channel MOSFET, 84 A, 1200 V Enhancement, 4-Pin TO-247
- RS Stock No.:
- 202-5696
- Mfr. Part No.:
- NTH4L020N120SC1
- Manufacturer:
- onsemi
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Currently unavailable
We don't know if this item will be back in stock, RS intend to remove it from our range soon.
- RS Stock No.:
- 202-5696
- Mfr. Part No.:
- NTH4L020N120SC1
- Manufacturer:
- onsemi
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 84A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Series | NTH | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 28mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 220nC | |
| Maximum Gate Source Voltage Vgs | 25 V | |
| Maximum Power Dissipation Pd | 510W | |
| Forward Voltage Vf | 3.7V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Width | 5.2 mm | |
| Standards/Approvals | No | |
| Height | 15.2mm | |
| Length | 18.62mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 84A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Series NTH | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 28mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 220nC | ||
Maximum Gate Source Voltage Vgs 25 V | ||
Maximum Power Dissipation Pd 510W | ||
Forward Voltage Vf 3.7V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Width 5.2 mm | ||
Standards/Approvals No | ||
Height 15.2mm | ||
Length 18.62mm | ||
Automotive Standard No | ||
Silicon Carbide (SiC) MOSFET - EliteSiC, 20 mohm, 1200 V, M1, TO-247-4L Silicon Carbide (SiC) MOSFET - EliteSiC, 20 mohm, 1200 V, M1, TO-247-4L
The ON Semiconductor Silicon Carbide Power MOSFET runs with 102 Ampere and 1200 Volts. It can be used in uninterruptible power supply, DC or DC converter, Boost inverter.
20mO drain to source on resistance
Ultra low gate charge
100% avalanche tested
Pb free
RoHS compliant
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