Vishay E Type N-Channel Power MOSFET, 30 A, 600 V Enhancement, 3-Pin TO-220 SIHA100N60E-GE3

The image is for reference only, please refer to product details and specifications

Bulk discount available
View bulk pricing options

Subtotal (1 pack of 2 units)*

HK$72.50

Add to Basket
Select or type quantity
In Stock
  • Plus 996 unit(s) shipping from 08 June 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units
Per unit
Per Pack*
2 - 12HK$36.25HK$72.50
14 - 24HK$35.35HK$70.70
26 +HK$34.80HK$69.60

*price indicative

Packaging Options:
RS Stock No.:
188-4970
Mfr. Part No.:
SIHA100N60E-GE3
Manufacturer:
Vishay
Find similar products by selecting one or more attributes.
Select all

Brand

Vishay

Product Type

Power MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

30A

Maximum Drain Source Voltage Vds

600V

Package Type

TO-220

Series

E

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

0.1Ω

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

33nC

Maximum Power Dissipation Pd

35W

Forward Voltage Vf

1.2V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Height

15.3mm

Length

10.3mm

Standards/Approvals

No

Automotive Standard

No

E Series Power MOSFET.

4th generation E series technology

Low figure-of-merit (FOM) Ron x Qg

Low effective capacitance (Co(er))

APPLICATIONS

Server and telecom power supplies

Switch mode power supplies (SMPS)

Power factor correction power supplies (PFC)

Related links

Be the first to know about our latest products and offers

Email address

The personal information you provide to us when signing up to this mailing list will be processed in line with the Privacy Policy