Vishay E Type N-Channel MOSFET, 9 A, 850 V Enhancement, 3-Pin TO-220 SIHA24N80AE-GE3

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Subtotal (1 pack of 2 units)*

HK$37.60

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Per unit
Per Pack*
2 - 8HK$18.80HK$37.60
10 - 18HK$18.45HK$36.90
20 - 24HK$18.15HK$36.30
26 - 98HK$17.80HK$35.60
100 +HK$17.50HK$35.00

*price indicative

Packaging Options:
RS Stock No.:
228-2837
Mfr. Part No.:
SIHA24N80AE-GE3
Manufacturer:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

9A

Maximum Drain Source Voltage Vds

850V

Package Type

TO-220

Series

E

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

184mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

30 V

Typical Gate Charge Qg @ Vgs

59nC

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.2V

Maximum Power Dissipation Pd

35W

Maximum Operating Temperature

150°C

Standards/Approvals

No

Automotive Standard

No

The Vishay E Series Power MOSFET reduced switching and conduction losses.

Low figure-of-merit (FOM) Ron x Qg

Low effective capacitance (Co(er))

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