Vishay Common Drain TrenchFET 3 Type P, Type N-Channel MOSFET, 30 A, 200 V Enhancement, 10-Pin Triple Die

RS Stock No.:: 188-4925
Mfr. Part No.:: SQUN702E-T1_GE3
Manufacturer:: Vishay

Vishay Common Drain TrenchFET 3 Type P, Type N-Channel MOSFET, 30 A, 200 V Enhancement, 10-Pin Triple Die

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RS Stock No.:: 188-4925
Mfr. Part No.:: SQUN702E-T1_GE3
Manufacturer:: Vishay

Specifications

Product overview and Technical data sheets

Legislation and Compliance

Product Details

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Select all	Attribute	Value
	Brand	Vishay
	Channel Type	Type P, Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	30A
	Maximum Drain Source Voltage Vds	200V
	Series	TrenchFET
	Package Type	Triple Die
	Mount Type	Surface
	Pin Count	10
	Channel Mode	Enhancement
	Forward Voltage Vf	0.79V
	Maximum Gate Source Voltage Vgs	20V
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	23nC
	Maximum Power Dissipation Pd	60W
	Maximum Operating Temperature	+175°C
	Transistor Configuration	Common Drain
	Standards/Approvals	No
	Number of Elements per Chip	3
	Automotive Standard	AEC-Q101

	Select all
	Brand Vishay
	Channel Type Type P, Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 30A
	Maximum Drain Source Voltage Vds 200V
	Series TrenchFET
	Package Type Triple Die
	Mount Type Surface
	Pin Count 10
	Channel Mode Enhancement
	Forward Voltage Vf 0.79V
	Maximum Gate Source Voltage Vgs 20V
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 23nC
	Maximum Power Dissipation Pd 60W
	Maximum Operating Temperature +175°C
	Transistor Configuration Common Drain
	Standards/Approvals No
	Number of Elements per Chip 3
	Automotive Standard AEC-Q101

Datasheet SQUN702E-T1_GE3

Vishay TrenchFET Series MOSFET, 200V Drain Source Voltage, 30A Continuous Drain Current - SQUN702E-T1_GE3

This MOSFET is a surface-mount transistor device designed for power switching in demanding environments. It employs a triple-die topology in a common-drain configuration to handle elevated voltages and currents while supporting both P-channel and N-channel enhancement modes for flexible circuit integration.

Features and Benefits:

• 200V drain rating enables high-voltage switching capability
• 30A continuous drain current supports heavy load handling
• 60W dissipation permits sustained power delivery
• 20V gate tolerance allows robust gate-drive margin
• 23 nC typical gate charge yields predictable switching energy
• +175 °C maximum operation suits high-temperature use cases

Applications

• Suitable for automotive power distribution modules
• Used for high-voltage DC-DC conversion stages
• Ideal for motor driver half-bridge assemblies
• Can be used for compact surface-mount power supplies
• Used with synchronous rectification circuits for efficiency

What pin configuration does it use for PCB layout?

The device uses a 10-pin package in a common-drain arrangement, allowing specific routing of source and gate connections while keeping the drain common across the triple-die structure.

How does the intrinsic diode perform during conduction?

The body diode exhibits a forward voltage of 0.79V, affecting conduction losses and thermal loading during reverse-recovery events.

Are both channel polarities available on the same component?

The device contains both P-channel and N-channel elements implemented as enhancement-mode transistors to accommodate complementary switching topologies.

What environmental temperature range can it tolerate during operation?

It is specified for operation from -55 °C up to +175 °C, permitting use across a wide thermal span in harsh conditions.