Vishay Common Drain TrenchFET 3 Type P, Type N-Channel MOSFET, 30 A, 200 V Enhancement, 10-Pin Triple Die
- RS Stock No.:
- 188-5065
- Mfr. Part No.:
- SQUN702E-T1_GE3
- Manufacturer:
- Vishay
The image is for reference only, please refer to product details and specifications
Bulk discount available
Subtotal (1 pack of 5 units)*
HK$159.50
FREE delivery for orders over HK$250.00
In Stock
- 40 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 495 | HK$31.90 | HK$159.50 |
| 500 - 995 | HK$31.10 | HK$155.50 |
| 1000 + | HK$30.62 | HK$153.10 |
*price indicative
- RS Stock No.:
- 188-5065
- Mfr. Part No.:
- SQUN702E-T1_GE3
- Manufacturer:
- Vishay
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type P, Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 30A | |
| Maximum Drain Source Voltage Vds | 200V | |
| Package Type | Triple Die | |
| Series | TrenchFET | |
| Mount Type | Surface | |
| Pin Count | 10 | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 0.79V | |
| Minimum Operating Temperature | 175°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 23nC | |
| Maximum Power Dissipation Pd | 60W | |
| Transistor Configuration | Common Drain | |
| Maximum Operating Temperature | -55°C | |
| Standards/Approvals | No | |
| Number of Elements per Chip | 3 | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type P, Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 30A | ||
Maximum Drain Source Voltage Vds 200V | ||
Package Type Triple Die | ||
Series TrenchFET | ||
Mount Type Surface | ||
Pin Count 10 | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 0.79V | ||
Minimum Operating Temperature 175°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 23nC | ||
Maximum Power Dissipation Pd 60W | ||
Transistor Configuration Common Drain | ||
Maximum Operating Temperature -55°C | ||
Standards/Approvals No | ||
Number of Elements per Chip 3 | ||
Automotive Standard AEC-Q101 | ||
Automotive 40 V N- and P-Channel Common Drain MOSFET Pair and 200 V N-Channel MOSFET.
Optimized triple die package
TrenchFET® power MOSFET
Related links
- Vishay Common Drain TrenchFET 3 Type P 30 A 10-Pin Triple Die
- Vishay Common Drain TrenchFET Gen IV 2 Type N-Channel Power MOSFET 60 V Enhancement, 8-Pin PowerPAK 1212
- Vishay Common Drain TrenchFET Gen IV 2 Type N-Channel Power MOSFET 25 V Enhancement, 8-Pin PowerPAK 1212
- Vishay TrenchFET Type P-Channel MOSFET 40 V Enhancement, 3-Pin SOT-23
- Vishay Siliconix TrenchFET Type P-Channel MOSFET 30 V Enhancement, 6-Pin SC-70
- Vishay TrenchFET Type P-Channel MOSFET 40 V Enhancement, 4-Pin SO-8
- Vishay TrenchFET Type P-Channel MOSFET 80 V Enhancement, 3-Pin SOT-23
- Vishay Siliconix TrenchFET Type P-Channel MOSFET 200 V Enhancement, 8-Pin SO-8