DiodesZetex DMT Type N-Channel MOSFET, 82 A, 40 V Enhancement, 8-Pin PowerDI5060
- RS Stock No.:
- 182-6941
- Mfr. Part No.:
- DMTH43M8LPS-13
- Manufacturer:
- DiodesZetex
The image is for reference only, please refer to product details and specifications
Bulk discount available
Subtotal (1 reel of 2500 units)*
HK$10,955.00
FREE delivery for orders over HK$250.00
Temporarily out of stock
- Shipping from 15 March 2027
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 2500 - 2500 | HK$4.382 | HK$10,955.00 |
| 5000 - 7500 | HK$4.251 | HK$10,627.50 |
| 10000 + | HK$4.123 | HK$10,307.50 |
*price indicative
- RS Stock No.:
- 182-6941
- Mfr. Part No.:
- DMTH43M8LPS-13
- Manufacturer:
- DiodesZetex
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 82A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | PowerDI5060 | |
| Series | DMT | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 5mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 83W | |
| Typical Gate Charge Qg @ Vgs | 38.5nC | |
| Forward Voltage Vf | 1.2V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Width | 5.1 mm | |
| Height | 1.05mm | |
| Length | 6mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 82A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type PowerDI5060 | ||
Series DMT | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 5mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 83W | ||
Typical Gate Charge Qg @ Vgs 38.5nC | ||
Forward Voltage Vf 1.2V | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Width 5.1 mm | ||
Height 1.05mm | ||
Length 6mm | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- CN
This new generation N-Channel Enhancement Mode MOSFET is designed to minimize RDS(ON), yet maintain superior switching performance.
Rated to +175°C – Ideal for High Ambient Temperature Environments
100% Unclamped Inductive Switching – Ensures More Reliable And Robust End Application
Low RDS(ON) – Minimizes On-State Losses
Low Input Capacitance
Fast Switching Speed
Applications
BLDC Motors
DC-DC Converters
Load Switch
Related links
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