DiodesZetex DMT Type N-Channel MOSFET, 46.3 A, 100 V Enhancement, 4-Pin TO-252
- RS Stock No.:
- 182-6936
- Mfr. Part No.:
- DMTH10H025SK3-13
- Manufacturer:
- DiodesZetex
The image is for reference only, please refer to product details and specifications
Bulk discount available
Subtotal (1 reel of 2500 units)*
HK$7,285.00
FREE delivery for orders over HK$250.00
Temporarily out of stock
- Shipping from 15 February 2027
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 2500 - 2500 | HK$2.914 | HK$7,285.00 |
| 5000 - 7500 | HK$2.827 | HK$7,067.50 |
| 10000 + | HK$2.742 | HK$6,855.00 |
*price indicative
- RS Stock No.:
- 182-6936
- Mfr. Part No.:
- DMTH10H025SK3-13
- Manufacturer:
- DiodesZetex
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 46.3A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | DMT | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 30mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.3V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 21.4nC | |
| Maximum Power Dissipation Pd | 3.7W | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Height | 2.26mm | |
| Width | 6.2 mm | |
| Length | 6.7mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 46.3A | ||
Maximum Drain Source Voltage Vds 100V | ||
Series DMT | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 30mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.3V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 21.4nC | ||
Maximum Power Dissipation Pd 3.7W | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Height 2.26mm | ||
Width 6.2 mm | ||
Length 6.7mm | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- CN
This new generation MOSFET features low on-resistance and fast switching, making it ideal for high efficiency power management applications.
100% Unclamped Inductive Switching – Ensures More Reliable
and Robust End Application
Low RDS(ON) – Minimizes Power Losses
Low QG – Minimizes Switching Losses
Lead-free finish
Halogen and Antimony Free. “Green” Device.
Applications
Power Management Functions
DC-DC Converters
Backlighting
Related links
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