Vishay 1 Type N-Channel Power MOSFET, 1.4 A, 800 V TO-220FP IRFIBE20GPBF
- RS Stock No.:
- 180-8329
- Mfr. Part No.:
- IRFIBE20GPBF
- Manufacturer:
- Vishay
The image is for reference only, please refer to product details and specifications
Bulk discount available
Subtotal (1 tube of 50 units)*
HK$484.00
FREE delivery for orders over HK$250.00
Temporarily out of stock
- Shipping from 16 April 2027
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Units | Per unit | Per Tube* |
|---|---|---|
| 50 - 50 | HK$9.68 | HK$484.00 |
| 100 - 150 | HK$9.47 | HK$473.50 |
| 200 + | HK$9.26 | HK$463.00 |
*price indicative
- RS Stock No.:
- 180-8329
- Mfr. Part No.:
- IRFIBE20GPBF
- Manufacturer:
- Vishay
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type N | |
| Product Type | Power MOSFET | |
| Maximum Continuous Drain Current Id | 1.4A | |
| Maximum Drain Source Voltage Vds | 800V | |
| Package Type | TO-220FP | |
| Maximum Drain Source Resistance Rds | 6.5Ω | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Maximum Power Dissipation Pd | 30W | |
| Typical Gate Charge Qg @ Vgs | 38nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Number of Elements per Chip | 1 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type N | ||
Product Type Power MOSFET | ||
Maximum Continuous Drain Current Id 1.4A | ||
Maximum Drain Source Voltage Vds 800V | ||
Package Type TO-220FP | ||
Maximum Drain Source Resistance Rds 6.5Ω | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Maximum Power Dissipation Pd 30W | ||
Typical Gate Charge Qg @ Vgs 38nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Number of Elements per Chip 1 | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The Vishay IRFIBE20G is a N-channel power MOSFET having drain to source(Vds) voltage of 800V.The gate to source voltage(VGS) is 20V. It is having TO-220 FULLPAK package. It offers drain to source resistance (RDS.) 6.5ohms at 10VGS.
Isolated package
High voltage isolation = 2.5 kVrms (t = 60 s; f = 60 Hz)
Sink to lead creepage distance = 4.8 mm
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