Vishay IRFU1N60A Type N-Channel Power MOSFET, 1.4 A, 600 V Enhancement, 3-Pin IPAK IRFU1N60APBF
- RS Stock No.:
- 145-1664
- Mfr. Part No.:
- IRFU1N60APBF
- Manufacturer:
- Vishay
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HK$596.70
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In Stock
- 525 unit(s) ready to ship from another location
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Units | Per unit | Per Tube* |
|---|---|---|
| 75 - 300 | HK$7.956 | HK$596.70 |
| 375 + | HK$7.16 | HK$537.00 |
*price indicative
- RS Stock No.:
- 145-1664
- Mfr. Part No.:
- IRFU1N60APBF
- Manufacturer:
- Vishay
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | Power MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 1.4A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | IPAK | |
| Series | IRFU1N60A | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 7Ω | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.6V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 36W | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Typical Gate Charge Qg @ Vgs | 14nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Width | 2.39mm | |
| Length | 6.73mm | |
| Height | 6.22mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type Power MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 1.4A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type IPAK | ||
Series IRFU1N60A | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 7Ω | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.6V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 36W | ||
Maximum Gate Source Voltage Vgs 30V | ||
Typical Gate Charge Qg @ Vgs 14nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Width 2.39mm | ||
Length 6.73mm | ||
Height 6.22mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- MY
Vishay IRFU1N60A Series Power MOSFET, 600V Drain Source Voltage, 1.4A Continuous Drain Current - IRFU1N60APBF
This power MOSFET is a high-voltage N-channel switching transistor designed for through-hole assembly in industrial electronics. It is intended for applications requiring high drain-source voltage handling and moderate continuous current, operating across a wide temperature range for demanding environments. The device complies with RoHS and is supplied in an IPak through-hole package.
Features and Benefits:
• 600V drain-source voltage for high-voltage switching capability
• 1.4A continuous drain current supporting moderate load currents
• 7Ω maximum Rds(on) reducing conduction losses at low currents
• 36W power dissipation allowing sustained thermal load handling
• 14nC typical gate charge enabling efficient gate-drive behaviour
• Gate-source withstand up to 30V for robust control-voltage margin
• 1.4A continuous drain current supporting moderate load currents
• 7Ω maximum Rds(on) reducing conduction losses at low currents
• 36W power dissipation allowing sustained thermal load handling
• 14nC typical gate charge enabling efficient gate-drive behaviour
• Gate-source withstand up to 30V for robust control-voltage margin
Applications
• Suitable for offline power supplies requiring high-voltage switches
• Used for lighting ballast and lamp control circuits
• Ideal for motor-drive gate stage in low-power systems
• Can be used for snubber or clamp-switch functions in converters
• Used with sensor and measurement front ends requiring high Vds
• Used for lighting ballast and lamp control circuits
• Ideal for motor-drive gate stage in low-power systems
• Can be used for snubber or clamp-switch functions in converters
• Used with sensor and measurement front ends requiring high Vds
What thermal extremes can the device tolerate in operation?
It operates from -55°C up to 150°C, permitting use in industrial and elevated-temperature assemblies.
How is the transistor mounted on the board?
It is intended for through-hole mounting in an IPak package for secure mechanical retention.
What is the typical forward voltage in conduction scenarios?
The device exhibits a forward voltage of 1.6V under the specified test conditions for body-diode conduction.
Does the gate require special drive considerations due to charge?
With a typical gate charge of 14nC, gate drivers should be chosen to provide sufficient current for the intended switching speed without excessive drive losses.
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