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    N-Channel MOSFET, 12 A, 60 V, 6-Pin SC-70-6L Vishay Siliconix SiA106DJ-T1-GE3

    RS Stock No.:
    178-3901P
    Mfr. Part No.:
    SiA106DJ-T1-GE3
    Manufacturer:
    Vishay Siliconix
    Vishay Siliconix
    View all MOSFETs
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    Price Each (Supplied on a Reel) Quantities below 150 on continuous strip

    HK$8.283

    unitsPer unit
    750 - 1490HK$8.283
    1500 +HK$8.156
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    RS Stock No.:
    178-3901P
    Mfr. Part No.:
    SiA106DJ-T1-GE3
    Manufacturer:
    Vishay Siliconix

    RoHS Status: Not Applicable

    COO (Country of Origin):
    CN

    Product overview and Technical data sheets


    Legislation and Compliance

    RoHS Status: Not Applicable

    COO (Country of Origin):
    CN

    Product Details

    TrenchFET® Gen IV power MOSFET
    Very low RDS - Qg Figure-of-Merit (FOM)
    Tuned for the lowest RDS – Qoss


    Specifications

    AttributeValue
    Channel TypeN
    Maximum Continuous Drain Current12 A
    Maximum Drain Source Voltage60 V
    Package TypeSC-70-6L
    Mounting TypeSurface Mount
    Pin Count6
    Maximum Drain Source Resistance20 mΩ
    Channel ModeEnhancement
    Maximum Gate Threshold Voltage4V
    Minimum Gate Threshold Voltage2V
    Maximum Power Dissipation19 W
    Transistor ConfigurationSingle
    Maximum Gate Source Voltage±20 V
    Transistor MaterialSi
    Maximum Operating Temperature+150 °C
    Length2.2mm
    Typical Gate Charge @ Vgs8.9 nC @ 10 V
    Width1.35mm
    Number of Elements per Chip1
    Height1mm
    Minimum Operating Temperature-55 °C
    SeriesTrenchFET
    Forward Diode Voltage1.2V
    Available for back order.
    Add to Basket
    units

    This product is currently unavailable to backorder.

    Unfortunately, we don’t have this product in stock and it’s not available to backorder at this time.

    Added

    Price Each (Supplied on a Reel) Quantities below 150 on continuous strip

    HK$8.283

    unitsPer unit
    750 - 1490HK$8.283
    1500 +HK$8.156
    Packaging Options: