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    N-Channel MOSFET, 14.4 A, 250 V, 8-Pin SO-8 Vishay Siliconix Si7190ADP-T1-RE3

    RS Stock No.:
    178-3875P
    Mfr. Part No.:
    Si7190ADP-T1-RE3
    Manufacturer:
    Vishay Siliconix
    Vishay Siliconix
    View all MOSFETs
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    Price Each (Supplied on a Reel) Quantities below 150 on continuous strip

    HK$19.396

    unitsPer unit
    750 - 1495HK$19.396
    1500 +HK$19.098
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    RS Stock No.:
    178-3875P
    Mfr. Part No.:
    Si7190ADP-T1-RE3
    Manufacturer:
    Vishay Siliconix

    RoHS Status: Not Applicable

    COO (Country of Origin):
    CN

    Product overview and Technical data sheets


    Legislation and Compliance

    RoHS Status: Not Applicable

    COO (Country of Origin):
    CN

    Product Details

    TrenchFET® power MOSFET
    Low thermal resistance PowerPAK® package



    Specifications

    AttributeValue
    Channel TypeN
    Maximum Continuous Drain Current14.4 A
    Maximum Drain Source Voltage250 V
    Package TypeSO-8
    Mounting TypeSurface Mount
    Pin Count8
    Maximum Drain Source Resistance110 mΩ
    Channel ModeEnhancement
    Maximum Gate Threshold Voltage4V
    Minimum Gate Threshold Voltage2V
    Maximum Power Dissipation56.8 W
    Transistor ConfigurationSingle
    Maximum Gate Source Voltage±20 V
    Number of Elements per Chip1
    Typical Gate Charge @ Vgs14.9 nC @ 10 V
    Length5.99mm
    Width5mm
    Maximum Operating Temperature+150 °C
    Transistor MaterialSi
    Height1.07mm
    Minimum Operating Temperature-55 °C
    SeriesTrenchFET
    Forward Diode Voltage1.2V
    Available for back order.
    Add to Basket
    units

    This product is currently unavailable to backorder.

    Unfortunately, we don’t have this product in stock and it’s not available to backorder at this time.

    Added

    Price Each (Supplied on a Reel) Quantities below 150 on continuous strip

    HK$19.396

    unitsPer unit
    750 - 1495HK$19.396
    1500 +HK$19.098
    Packaging Options: