Vishay Siliconix TrenchFET Type P-Channel MOSFET, 9.4 A, 200 V Enhancement, 8-Pin SO-8 SQJ431AEP-T1_GE3

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Subtotal 750 units (supplied on a reel)*

HK$8,655.00

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750 - 1490HK$11.54
1500 +HK$11.35

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Packaging Options:
RS Stock No.:
178-3873P
Mfr. Part No.:
SQJ431AEP-T1_GE3
Manufacturer:
Vishay Siliconix
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Brand

Vishay Siliconix

Product Type

MOSFET

Channel Type

Type P

Maximum Continuous Drain Current Id

9.4A

Maximum Drain Source Voltage Vds

200V

Series

TrenchFET

Package Type

SO-8

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

760mΩ

Channel Mode

Enhancement

Forward Voltage Vf

-1.2V

Maximum Power Dissipation Pd

68W

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

55nC

Maximum Operating Temperature

175°C

Length

5.99mm

Width

5 mm

Standards/Approvals

No

Height

1.07mm

Automotive Standard

AEC-Q101

RoHS Status: Exempt

COO (Country of Origin):
CN
TrenchFET® power MOSFET

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