Vishay Siliconix TrenchFET Type P-Channel MOSFET, 9.4 A, 200 V Enhancement, 8-Pin SO-8

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Subtotal (1 reel of 3000 units)*

HK$16,602.00

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3000 - 12000HK$5.534HK$16,602.00
15000 +HK$5.423HK$16,269.00

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RS Stock No.:
178-3718
Mfr. Part No.:
SQJ431AEP-T1_GE3
Manufacturer:
Vishay Siliconix
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Brand

Vishay Siliconix

Channel Type

Type P

Product Type

MOSFET

Maximum Continuous Drain Current Id

9.4A

Maximum Drain Source Voltage Vds

200V

Package Type

SO-8

Series

TrenchFET

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

760mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

68W

Typical Gate Charge Qg @ Vgs

55nC

Minimum Operating Temperature

-55°C

Forward Voltage Vf

-1.2V

Maximum Operating Temperature

175°C

Height

1.07mm

Standards/Approvals

No

Width

5 mm

Length

5.99mm

Automotive Standard

AEC-Q101

RoHS Status: Exempt

COO (Country of Origin):
CN
TrenchFET® power MOSFET

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