P-Channel MOSFET, 16 A, 80 V, 4-Pin PowerPAK SO-8L Vishay Siliconix SQJ481EP-T1_GE3
- RS Stock No.:
- 178-3883
- Mfr. Part No.:
- SQJ481EP-T1_GE3
- Manufacturer:
- Vishay Siliconix
View all MOSFETs
Available for back order.
Price Each (In a Pack of 25)
HK$9.476
| units | Per unit | Per Pack* |
| 25 - 725 | HK$9.476 | HK$236.90 |
| 750 - 1475 | HK$9.239 | HK$230.975 |
| 1500 + | HK$9.096 | HK$227.40 |
| *price indicative | ||
Packaging Options:
- RS Stock No.:
- 178-3883
- Mfr. Part No.:
- SQJ481EP-T1_GE3
- Manufacturer:
- Vishay Siliconix
RoHS Status: Not Applicable
- COO (Country of Origin):
- CN
Product overview and Technical data sheets
Legislation and Compliance
RoHS Status: Not Applicable
- COO (Country of Origin):
- CN
Product Details
TrenchFET® power MOSFET
Specifications
| Attribute | Value |
| Channel Type | P |
| Maximum Continuous Drain Current | 16 A |
| Maximum Drain Source Voltage | 80 V |
| Package Type | PowerPAK SO-8L |
| Mounting Type | Surface Mount |
| Pin Count | 4 |
| Maximum Drain Source Resistance | 90 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 2.5V |
| Minimum Gate Threshold Voltage | 1.5V |
| Maximum Power Dissipation | 45 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | ±20 V |
| Number of Elements per Chip | 1 |
| Length | 5.99mm |
| Maximum Operating Temperature | +175 °C |
| Typical Gate Charge @ Vgs | 33 nC @ 10 V |
| Width | 5mm |
| Transistor Material | Si |
| Height | 1.07mm |
| Series | TrenchFET |
| Automotive Standard | AEC-Q101 |
| Forward Diode Voltage | 1.2V |
| Minimum Operating Temperature | -55 °C |