Vishay IRFP9240 Type P-Channel Power MOSFET, -12 A, -200 V Enhancement, 3-Pin TO-247AC IRFP9240PBF

The image is for reference only, please refer to product details and specifications

Bulk discount available
View bulk pricing options

Subtotal (1 tube of 25 units)*

HK$509.40

Add to Basket
Select or type quantity
In Stock
  • 625 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units
Per unit
Per Tube*
25 - 100HK$20.376HK$509.40
125 +HK$18.34HK$458.50

*price indicative

RS Stock No.:
178-0786
Mfr. Part No.:
IRFP9240PBF
Manufacturer:
Vishay
Find similar products by selecting one or more attributes.
Select all

Brand

Vishay

Product Type

Power MOSFET

Channel Type

Type P

Maximum Continuous Drain Current Id

-12A

Maximum Drain Source Voltage Vds

-200V

Series

IRFP9240

Package Type

TO-247AC

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

500mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

44nC

Forward Voltage Vf

-5V

Maximum Power Dissipation Pd

150W

Maximum Operating Temperature

150°C

Length

15.87mm

Standards/Approvals

RoHS

Width

5.31mm

Height

20.7mm

Automotive Standard

No

Vishay IRFP9240 Series Power MOSFET, 150W Maximum Power Dissipation, -200V Maximum Drain Source Voltage - IRFP9240PBF


This power MOSFET is a high-voltage P‑channel switching transistor designed for power-management and high-voltage applications. It operates across a wide ambient range and is supplied in a through‑hole package suitable for robust board mounting. The device is intended for circuits requiring substantial power handling and P‑channel topology for high-side switching or polarity-specific arrangements.

Features and Benefits:


• -200V drain‑source rating enables high-voltage switching capability
• P‑channel enhancement mode simplifies high-side switching arrangements
• -12A continuous drain current supports moderate high-current loads
• 150W power dissipation allows sustained power handling
• 500mΩ maximum Rds(on) reduces conduction losses under load
• 44nC typical gate charge yields predictable gate-drive requirements

Applications


• Suitable for high-voltage power rails and polarity protection
• Ideal for high-side switches in DC distribution systems
• Used with gate drivers requiring moderate charge handling
• Can be used for industrial power modules and supplies
• Appropriate for discrete power stages in converters

What mounting style does it require for thermal management?


It is supplied in a TO‑247AC through‑hole package intended for heatsinking on a chassis or dedicated sinks to dissipate heat effectively.

What gate-drive voltage constraints must I observe?


The maximum gate‑source voltage is 20V, so gate drivers should be limited within that range to avoid gate overstress.

How does temperature affect operating limits?


It is specified to function from -55°C up to 150°C, so derating and thermal design should account for elevated junction temperatures.

How many electrical connections are presented for circuit integration?


The device has three pins for drain, gate and source connection, consistent with standard discrete MOSFET implementations.

Related links

Be the first to know about our latest products and offers

Email address

The personal information you provide to us when signing up to this mailing list will be processed in line with the Privacy Policy