ROHM N-Channel MOSFET, 4 A, 600 V, 3-Pin TO-220FM R6004ENX
- RS Stock No.:
- 172-0546
- Mfr. Part No.:
- R6004ENX
- Manufacturer:
- ROHM
Stock information currently inaccessible
- RS Stock No.:
- 172-0546
- Mfr. Part No.:
- R6004ENX
- Manufacturer:
- ROHM
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | ROHM | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 4 A | |
| Maximum Drain Source Voltage | 600 V | |
| Package Type | TO-220FM | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 1.36 Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4V | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 40 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | ±20 V | |
| Maximum Operating Temperature | +150 °C | |
| Typical Gate Charge @ Vgs | 15 nC @ 10 V | |
| Length | 10.3mm | |
| Width | 4.8mm | |
| Number of Elements per Chip | 1 | |
| Forward Diode Voltage | 1.5V | |
| Height | 15.4mm | |
| Select all | ||
|---|---|---|
Brand ROHM | ||
Channel Type N | ||
Maximum Continuous Drain Current 4 A | ||
Maximum Drain Source Voltage 600 V | ||
Package Type TO-220FM | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 1.36 Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 40 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage ±20 V | ||
Maximum Operating Temperature +150 °C | ||
Typical Gate Charge @ Vgs 15 nC @ 10 V | ||
Length 10.3mm | ||
Width 4.8mm | ||
Number of Elements per Chip 1 | ||
Forward Diode Voltage 1.5V | ||
Height 15.4mm | ||
- COO (Country of Origin):
- JP
Power MOSFETs are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications. Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.
Low on-resistance.
Fast switching speed.
Gate-source voltage (VGSS) guaranteed to be ±20V.
Drive circuits can be simple.
Parallel use is easy.
Pb-free lead plating
Fast switching speed.
Gate-source voltage (VGSS) guaranteed to be ±20V.
Drive circuits can be simple.
Parallel use is easy.
Pb-free lead plating
Related links
- ROHM N-Channel MOSFET 600 V, 3-Pin TO-220FM R6006JNXC7G
- ROHM N-Channel MOSFET 600 V, 3-Pin TO-220FM R6018JNXC7G
- ROHM N-Channel MOSFET 600 V, 3-Pin TO-220FM R6009JNXC7G
- ROHM R60 Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-220FM R6061YNXC7G
- ROHM R60 Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-220FM R6038YNXC7G
- ROHM R6012JNX Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-220FM R6012JNXC7G
- ROHM R60 Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-220FM R6027YNXC7G
- ROHM Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-220FM R6020KNX