ROHM Type N-Channel MOSFET, 7 A, 600 V Enhancement, 3-Pin TO-220FM R6007ENX

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Subtotal (1 pack of 10 units)*

HK$93.70

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Per Pack*
10 - 40HK$9.37HK$93.70
50 - 90HK$9.14HK$91.40
100 - 190HK$8.91HK$89.10
200 - 390HK$8.68HK$86.80
400 +HK$8.47HK$84.70

*price indicative

RS Stock No.:
172-0548
Mfr. Part No.:
R6007ENX
Manufacturer:
ROHM
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Brand

ROHM

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

7A

Maximum Drain Source Voltage Vds

600V

Package Type

TO-220FM

Mount Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance Rds

1.20Ω

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

30 V

Typical Gate Charge Qg @ Vgs

20nC

Maximum Power Dissipation Pd

40W

Forward Voltage Vf

1.5V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Width

4.8 mm

Length

10.3mm

Standards/Approvals

RoHS

Height

15.4mm

COO (Country of Origin):
JP
Power MOSFETs are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications. Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.

Low on-resistance.

Fast switching speed.

Gate-source voltage (VGSS) guaranteed to be ±20V.

Drive circuits can be simple.

Parallel use is easy.

Pb-free lead plating

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