IXYS Polar HiPerFET N-Channel MOSFET, 200 A, 100 V, 4-Pin SOT-227 IXFN200N10P

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Subtotal (1 tube of 10 units)*

HK$2,026.00

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Per unit
Per Tube*
10 - 40HK$202.60HK$2,026.00
50 +HK$198.54HK$1,985.40

*price indicative

RS Stock No.:
168-4576
Mfr. Part No.:
IXFN200N10P
Manufacturer:
IXYS
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Brand

IXYS

Channel Type

N

Maximum Continuous Drain Current

200 A

Maximum Drain Source Voltage

100 V

Package Type

SOT-227

Series

Polar HiPerFET

Mounting Type

Screw Mount

Pin Count

4

Maximum Drain Source Resistance

7.5 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

680 W

Maximum Gate Source Voltage

-20 V, +20 V

Width

25.07mm

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Typical Gate Charge @ Vgs

235 nC @ 10 V

Length

38.23mm

Height

9.6mm

Forward Diode Voltage

1.5V

Minimum Operating Temperature

-55 °C

COO (Country of Origin):
PH

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