IXYS Polar HiPerFET N-Channel MOSFET, 70 A, 300 V, 3-Pin ISOPLUS247 IXFR140N30P
- RS Stock No.:
- 125-8045
- Distrelec Article No.:
- 302-53-392
- Mfr. Part No.:
- IXFR140N30P
- Manufacturer:
- IXYS
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Bulk discount available
Subtotal (1 unit)*
HK$176.40
FREE delivery for orders over HK$250.00
In Stock
- 12 unit(s) ready to ship from another location
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Units | Per unit |
|---|---|
| 1 - 7 | HK$176.40 |
| 8 - 14 | HK$172.00 |
| 15 + | HK$169.40 |
*price indicative
- RS Stock No.:
- 125-8045
- Distrelec Article No.:
- 302-53-392
- Mfr. Part No.:
- IXFR140N30P
- Manufacturer:
- IXYS
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | IXYS | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 70 A | |
| Maximum Drain Source Voltage | 300 V | |
| Package Type | ISOPLUS247 | |
| Series | Polar HiPerFET | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 26 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 5V | |
| Minimum Gate Threshold Voltage | 3V | |
| Maximum Power Dissipation | 300 W | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Maximum Operating Temperature | +150 °C | |
| Width | 5.21mm | |
| Typical Gate Charge @ Vgs | 185 nC @ 10 V | |
| Length | 16.13mm | |
| Number of Elements per Chip | 1 | |
| Forward Diode Voltage | 1.3V | |
| Minimum Operating Temperature | -55 °C | |
| Height | 21.34mm | |
| Select all | ||
|---|---|---|
Brand IXYS | ||
Channel Type N | ||
Maximum Continuous Drain Current 70 A | ||
Maximum Drain Source Voltage 300 V | ||
Package Type ISOPLUS247 | ||
Series Polar HiPerFET | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 26 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 5V | ||
Minimum Gate Threshold Voltage 3V | ||
Maximum Power Dissipation 300 W | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Maximum Operating Temperature +150 °C | ||
Width 5.21mm | ||
Typical Gate Charge @ Vgs 185 nC @ 10 V | ||
Length 16.13mm | ||
Number of Elements per Chip 1 | ||
Forward Diode Voltage 1.3V | ||
Minimum Operating Temperature -55 °C | ||
Height 21.34mm | ||
- COO (Country of Origin):
- PH
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