Diodes Inc Dual N-Channel MOSFET, 6 A, 24 V, 4-Pin X1-WLB1818 DMN2023UCB4-7

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Subtotal (1 reel of 3000 units)*

HK$7,275.00

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Units
Per unit
Per Reel*
3000 - 3000HK$2.425HK$7,275.00
6000 - 9000HK$2.377HK$7,131.00
12000 +HK$2.329HK$6,987.00

*price indicative

RS Stock No.:
165-8417
Mfr. Part No.:
DMN2023UCB4-7
Manufacturer:
DiodesZetex
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Brand

DiodesZetex

Channel Type

N

Maximum Continuous Drain Current

6 A

Maximum Drain Source Voltage

24 V

Package Type

X1-WLB1818

Mounting Type

Surface Mount

Pin Count

4

Maximum Drain Source Resistance

40 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.3V

Minimum Gate Threshold Voltage

0.5V

Maximum Power Dissipation

1.45 W

Transistor Configuration

Common Drain

Maximum Gate Source Voltage

-12 V, +12 V

Number of Elements per Chip

2

Typical Gate Charge @ Vgs

29 nC @ 4.5 V

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Length

1.8mm

Width

1.8mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1V

Height

0.24mm

COO (Country of Origin):
CN

Dual N-Channel MOSFET, Diodes Inc.


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MOSFET Transistors, Diodes Inc.

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