Vishay SiR418DP Type N-Channel MOSFET, 23 A, 40 V Enhancement, 8-Pin SO-8

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Subtotal (1 reel of 3000 units)*

HK$16,701.00

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Units
Per unit
Per Reel*
3000 - 3000HK$5.567HK$16,701.00
6000 - 9000HK$5.456HK$16,368.00
12000 +HK$5.347HK$16,041.00

*price indicative

RS Stock No.:
165-7266
Mfr. Part No.:
SIR418DP-T1-GE3
Manufacturer:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

23A

Maximum Drain Source Voltage Vds

40V

Series

SiR418DP

Package Type

SO-8

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

6mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

50nC

Maximum Power Dissipation Pd

39W

Minimum Operating Temperature

-55°C

Forward Voltage Vf

0.71V

Maximum Gate Source Voltage Vgs

20 V

Maximum Operating Temperature

150°C

Width

5.26 mm

Height

1.12mm

Standards/Approvals

No

Length

6.25mm

Automotive Standard

No

COO (Country of Origin):
CN

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