Vishay SiR418DP Type N-Channel MOSFET, 23 A, 40 V Enhancement, 8-Pin SO-8 SIR418DP-T1-GE3

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Subtotal (1 pack of 10 units)*

HK$88.30

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Units
Per unit
Per Pack*
10 - 740HK$8.83HK$88.30
750 - 1490HK$8.61HK$86.10
1500 +HK$8.48HK$84.80

*price indicative

Packaging Options:
RS Stock No.:
814-1275
Mfr. Part No.:
SIR418DP-T1-GE3
Manufacturer:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

23A

Maximum Drain Source Voltage Vds

40V

Series

SiR418DP

Package Type

SO-8

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

6mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

50nC

Forward Voltage Vf

0.71V

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

39W

Maximum Operating Temperature

150°C

Standards/Approvals

No

Length

6.25mm

Height

1.12mm

Width

5.26 mm

Automotive Standard

No

COO (Country of Origin):
CN

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