SiC N-Channel MOSFET, 22 A, 1000 V, 7-Pin D2PAK Wolfspeed C3M0120100J
- RS Stock No.:
- 150-3965P
- Mfr. Part No.:
- C3M0120100J
- Manufacturer:
- Wolfspeed
683 In stock for delivery within 3 working days
Price Each (Supplied in a Tube)
HK$112.44
Units | Per unit |
|---|---|
| 13 - 24 | HK$112.44 |
| 25 + | HK$110.69 |
- RS Stock No.:
- 150-3965P
- Mfr. Part No.:
- C3M0120100J
- Manufacturer:
- Wolfspeed
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Wolfspeed introduces its latest breakthrough in SiC power device technology with the industry’s only 1kV SiC MOSFET in a newly optimized package suitable for fast switching devices. Optimized for electric-vehicle charging systems, and three-phase industrial power supplies, the new 1kV device addresses many power design challenges by providing a unique device with low on-Resistance, very low output capacitance and low source inductance for a perfect blend of low switching losses and low conduction losses.
Minimum of 1kV Vbr across entire operating temperature range
low source inductance package with separate driver source pin
High-speed switching with low output capacitance
High blocking voltage with low RDS(on)
Fast intrinsic diode with low reverse recovery (Qrr)
Easy to parallel and simple to drive
low source inductance package with separate driver source pin
High-speed switching with low output capacitance
High blocking voltage with low RDS(on)
Fast intrinsic diode with low reverse recovery (Qrr)
Easy to parallel and simple to drive
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
Specifications
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 22 A |
| Maximum Drain Source Voltage | 1000 V |
| Series | C3M |
| Package Type | TO-263-7 |
| Mounting Type | Surface Mount |
| Pin Count | 7 |
| Maximum Drain Source Resistance | 170 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 3.5V |
| Minimum Gate Threshold Voltage | 1.8V |
| Maximum Power Dissipation | 83 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | +15 V, +9 V |
| Length | 10.23mm |
| Number of Elements per Chip | 1 |
| Typical Gate Charge @ Vgs | 21.5 @ 4/+15 V |
| Width | 9.12mm |
| Transistor Material | SiC |
| Maximum Operating Temperature | +150 °C |
| Forward Diode Voltage | 4.8V |
| Minimum Operating Temperature | -55 °C |
| Height | 4.32mm |