IXYS HiperFET Type N-Channel MOSFET, 60 A, 650 V Enhancement, 3-Pin TO-268 IXFT60N65X2HV
- RS Stock No.:
- 146-4235
- Mfr. Part No.:
- IXFT60N65X2HV
- Manufacturer:
- IXYS
The image is for reference only, please refer to product details and specifications
Bulk discount available
Subtotal (1 tube of 30 units)*
HK$2,020.59
FREE delivery for orders over HK$250.00
Temporarily out of stock
- Shipping from 26 January 2027
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
|---|---|---|
| 30 - 30 | HK$67.353 | HK$2,020.59 |
| 60 - 90 | HK$65.89 | HK$1,976.70 |
| 120 + | HK$64.427 | HK$1,932.81 |
*price indicative
- RS Stock No.:
- 146-4235
- Mfr. Part No.:
- IXFT60N65X2HV
- Manufacturer:
- IXYS
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | IXYS | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 60A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Series | HiperFET | |
| Package Type | TO-268 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 52mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 108nC | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Maximum Power Dissipation Pd | 780W | |
| Forward Voltage Vf | 1.4V | |
| Maximum Operating Temperature | 150°C | |
| Height | 5.1mm | |
| Length | 16.05mm | |
| Width | 15.15 mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand IXYS | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 60A | ||
Maximum Drain Source Voltage Vds 650V | ||
Series HiperFET | ||
Package Type TO-268 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 52mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 108nC | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Maximum Power Dissipation Pd 780W | ||
Forward Voltage Vf 1.4V | ||
Maximum Operating Temperature 150°C | ||
Height 5.1mm | ||
Length 16.05mm | ||
Width 15.15 mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
Low RDS(ON) and Qg
Fast body diode
dv/dt ruggedness
Avalanche rated
Low package inductance
International standard packages
Resonant mode power supplies
High intensity discharge (HID) lamp ballast
AC and DC motor drives
DC-DC converters
Robotic and servo control
Battery chargers
3-level solar inverters
LED lighting
Unmanned Aerial Vehicles (UAVs)
Higher efficiency
High power density
Easy to mount
Space savings
Related links
- IXYS HiperFET Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-268
- IXYS HiperFET Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-247
- IXYS HiperFET Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-247 IXFH60N65X2
- IXYS HiperFET Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-247 IXFH80N65X2
- IXYS HiperFET Type N-Channel MOSFET 650 V Enhancement, 4-Pin SOT-227
- IXYS HiperFET Type N-Channel MOSFET 650 V Enhancement, 4-Pin SOT-227
- IXYS HiperFET Type N-Channel MOSFET 650 V Enhancement, 4-Pin SOT-227 IXFN150N65X2
- IXYS HiperFET Type N-Channel MOSFET 650 V Enhancement, 4-Pin SOT-227 IXFN170N65X2