IXYS HiperFET Type N-Channel MOSFET, 60 A, 650 V Enhancement, 3-Pin TO-247

The image is for reference only, please refer to product details and specifications

Bulk discount available

Subtotal (1 unit)*

HK$91.60

Add to Basket
Select or type quantity
In Stock
  • 270 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
1 - 7HK$91.60
8 - 14HK$89.30
15 +HK$87.90

*price indicative

RS Stock No.:
146-4372
Distrelec Article No.:
302-53-331
Mfr. Part No.:
IXFH60N65X2
Manufacturer:
IXYS
Find similar products by selecting one or more attributes.
Select all

Brand

IXYS

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

60A

Maximum Drain Source Voltage Vds

650V

Package Type

TO-247

Series

HiperFET

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

52mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

108nC

Forward Voltage Vf

1.4V

Maximum Power Dissipation Pd

780W

Maximum Gate Source Voltage Vgs

±30 V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Standards/Approvals

No

Length

16.13mm

Width

5.21 mm

Height

21.34mm

Automotive Standard

No

Low R and Q

Avalanche Rated

Low Package Inductance

Advantages

High Power Density

Easy to Mount

Space Savings

Applications

Switch-Mode and Resonant-Mode Power Supplies

DC-DC Converters

PFC Circuits

AC and DC Motor Drives

Robotics and Servo Controls

Related links