IXYS HiperFET N-Channel MOSFET, 145 A, 650 V, 4-Pin SOT-227 IXFN150N65X2
- RS Stock No.:
- 146-4239
- Mfr. Part No.:
- IXFN150N65X2
- Manufacturer:
- IXYS
Bulk discount available
Subtotal (1 tube of 10 units)*
HK$4,339.50
FREE delivery for orders over HK$250.00
In Stock
- 10 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
|---|---|---|
| 10 - 10 | HK$433.95 | HK$4,339.50 |
| 20 - 30 | HK$425.27 | HK$4,252.70 |
| 40 + | HK$416.77 | HK$4,167.70 |
*price indicative
- RS Stock No.:
- 146-4239
- Mfr. Part No.:
- IXFN150N65X2
- Manufacturer:
- IXYS
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | IXYS | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 145 A | |
| Maximum Drain Source Voltage | 650 V | |
| Package Type | SOT-227 | |
| Series | HiperFET | |
| Mounting Type | Screw Mount | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance | 17 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 5V | |
| Minimum Gate Threshold Voltage | 3.5V | |
| Maximum Power Dissipation | 1.04 kW | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | ±30 V | |
| Length | 38.23mm | |
| Typical Gate Charge @ Vgs | 335 @ 10 V nC | |
| Width | 25.07mm | |
| Number of Elements per Chip | 1 | |
| Maximum Operating Temperature | +150 °C | |
| Height | 9.6mm | |
| Minimum Operating Temperature | -55 °C | |
| Forward Diode Voltage | 1.4V | |
| Select all | ||
|---|---|---|
Brand IXYS | ||
Channel Type N | ||
Maximum Continuous Drain Current 145 A | ||
Maximum Drain Source Voltage 650 V | ||
Package Type SOT-227 | ||
Series HiperFET | ||
Mounting Type Screw Mount | ||
Pin Count 4 | ||
Maximum Drain Source Resistance 17 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 5V | ||
Minimum Gate Threshold Voltage 3.5V | ||
Maximum Power Dissipation 1.04 kW | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage ±30 V | ||
Length 38.23mm | ||
Typical Gate Charge @ Vgs 335 @ 10 V nC | ||
Width 25.07mm | ||
Number of Elements per Chip 1 | ||
Maximum Operating Temperature +150 °C | ||
Height 9.6mm | ||
Minimum Operating Temperature -55 °C | ||
Forward Diode Voltage 1.4V | ||
Low RDS(ON) and Qg
Fast body diode
dv/dt ruggedness
Avalanche rated
Low package inductance
International standard packages
Resonant mode power supplies
High intensity discharge (HID) lamp ballast
AC and DC motor drives
DC-DC converters
Robotic and servo control
Battery chargers
3-level solar inverters
LED lighting
Unmanned Aerial Vehicles (UAVs)
Higher efficiency
High power density
Easy to mount
Space savings
Fast body diode
dv/dt ruggedness
Avalanche rated
Low package inductance
International standard packages
Resonant mode power supplies
High intensity discharge (HID) lamp ballast
AC and DC motor drives
DC-DC converters
Robotic and servo control
Battery chargers
3-level solar inverters
LED lighting
Unmanned Aerial Vehicles (UAVs)
Higher efficiency
High power density
Easy to mount
Space savings
For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.
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