IXYS HiperFET Type N-Channel MOSFET, 36 A, 1 kV Enhancement, 4-Pin SOT-227

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Subtotal (1 tube of 10 units)*

HK$6,930.80

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Temporarily out of stock
  • 10 unit(s) shipping from 15 April 2026
  • Plus 10 unit(s) shipping from 22 April 2026
  • Plus 10 unit(s) shipping from 22 July 2026
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Units
Per unit
Per Tube*
10 - 10HK$693.08HK$6,930.80
20 - 90HK$679.22HK$6,792.20
100 +HK$665.63HK$6,656.30

*price indicative

RS Stock No.:
168-4473
Mfr. Part No.:
IXFN36N100
Manufacturer:
IXYS
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Brand

IXYS

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

36A

Maximum Drain Source Voltage Vds

1kV

Package Type

SOT-227

Series

HiperFET

Mount Type

Panel

Pin Count

4

Maximum Drain Source Resistance Rds

240mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

380nC

Maximum Power Dissipation Pd

700W

Forward Voltage Vf

1.3V

Maximum Operating Temperature

150°C

Standards/Approvals

No

Length

38.23mm

Width

25.42 mm

Height

9.6mm

Automotive Standard

No

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