ROHM RQ5E035BN Type N-Channel MOSFET, 3.5 A, 30 V Enhancement, 3-Pin TSMT RQ5E035BNTCL
- RS Stock No.:
- 133-3300
- Mfr. Part No.:
- RQ5E035BNTCL
- Manufacturer:
- ROHM
The image is for reference only, please refer to product details and specifications
Bulk discount available
Subtotal (1 pack of 50 units)*
HK$93.60
FREE delivery for orders over HK$250.00
Temporarily out of stock
- 2,000 unit(s) shipping from 02 February 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 50 - 200 | HK$1.872 | HK$93.60 |
| 250 - 450 | HK$1.838 | HK$91.90 |
| 500 - 2450 | HK$1.804 | HK$90.20 |
| 2500 - 4950 | HK$1.772 | HK$88.60 |
| 5000 + | HK$1.74 | HK$87.00 |
*price indicative
- RS Stock No.:
- 133-3300
- Mfr. Part No.:
- RQ5E035BNTCL
- Manufacturer:
- ROHM
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | ROHM | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 3.5A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | TSMT | |
| Series | RQ5E035BN | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 56mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.2V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 1W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 6nC | |
| Maximum Operating Temperature | 150°C | |
| Height | 0.95mm | |
| Length | 3mm | |
| Standards/Approvals | No | |
| Width | 1.8 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand ROHM | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 3.5A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type TSMT | ||
Series RQ5E035BN | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 56mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.2V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 1W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 6nC | ||
Maximum Operating Temperature 150°C | ||
Height 0.95mm | ||
Length 3mm | ||
Standards/Approvals No | ||
Width 1.8 mm | ||
Automotive Standard No | ||
N-Channel MOSFET Transistors, ROHM
MOSFET Transistors, ROHM Semiconductor
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