ROHM QH8MC5 Type N, Type P-Channel MOSFET, 3.5 A, 60 V Enhancement, 8-Pin TSMT-8 QH8MC5TCR
- RS Stock No.:
- 235-2674
- Mfr. Part No.:
- QH8MC5TCR
- Manufacturer:
- ROHM
The image is for reference only, please refer to product details and specifications
Bulk discount available
Subtotal (1 pack of 10 units)*
HK$60.60
FREE delivery for orders over HK$250.00
Temporarily out of stock
- Shipping from 19 June 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 40 | HK$6.06 | HK$60.60 |
| 50 - 90 | HK$5.95 | HK$59.50 |
| 100 - 240 | HK$5.84 | HK$58.40 |
| 250 - 990 | HK$5.74 | HK$57.40 |
| 1000 + | HK$5.64 | HK$56.40 |
*price indicative
- RS Stock No.:
- 235-2674
- Mfr. Part No.:
- QH8MC5TCR
- Manufacturer:
- ROHM
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | ROHM | |
| Product Type | MOSFET | |
| Channel Type | Type N, Type P | |
| Maximum Continuous Drain Current Id | 3.5A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | QH8MC5 | |
| Package Type | TSMT-8 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 91mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.2V | |
| Typical Gate Charge Qg @ Vgs | 3.5nC | |
| Maximum Power Dissipation Pd | 1.5W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Height | 2.9mm | |
| Standards/Approvals | No | |
| Width | 0.85 mm | |
| Length | 3.1mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand ROHM | ||
Product Type MOSFET | ||
Channel Type Type N, Type P | ||
Maximum Continuous Drain Current Id 3.5A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series QH8MC5 | ||
Package Type TSMT-8 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 91mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.2V | ||
Typical Gate Charge Qg @ Vgs 3.5nC | ||
Maximum Power Dissipation Pd 1.5W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Height 2.9mm | ||
Standards/Approvals No | ||
Width 0.85 mm | ||
Length 3.1mm | ||
Automotive Standard No | ||
The ROHM dual N channel and P channel MOSFET which supports 60V withstand voltage. This is designed for 24V input equipment's such as factory automation equipment's, and motors mounted on base stations. By combining the optimum N channel + P channel, reduces the design efforts. It also contributes to lower power consumption of equipment.
Low on-resistance
Small surface mount package
Pb-free lead plating
RoHS compliant
Halogen Free
Related links
- ROHM QH8MC5 Dual N/P-Channel MOSFET 3.5 A 8-Pin TSMT-8 QH8MC5TCR
- ROHM QS8 2 Type N 100 V Enhancement, 8-Pin TSMT-8 QS8M51HZGTR
- ROHM Dual 2 Type P-Channel MOSFET 60 V Enhancement, 8-Pin TSMT QH8JC5TCR
- ROHM QH8MA3 Type N 7 A 8-Pin TSMT
- ROHM RQ1A070AP Type P-Channel MOSFET -12 V Enhancement, 8-Pin TSMT-8 RQ1A070APTR
- ROHM RQ1 Type P-Channel MOSFET 30 V Enhancement, 8-Pin TSMT-8 RQ1E050RPHZGTR
- ROHM RQ1 Type P-Channel MOSFET 12 V Enhancement, 8-Pin TSMT-8 RQ1A070ZPHZGTR
- ROHM RQ1 Type P-Channel MOSFET 30 V Enhancement, 8-Pin TSMT-8 RQ1E070RPHZGTR