Toshiba DTMOSIV Type N-Channel MOSFET, 9.7 A, 500 V Enhancement, 3-Pin TO-220 TK10A50W,S5X(M
- RS Stock No.:
- 125-0531
- Mfr. Part No.:
- TK10A50W,S5X(M
- Manufacturer:
- Toshiba
The image is for reference only, please refer to product details and specifications
Bulk discount available
Subtotal (1 pack of 10 units)*
HK$108.40
FREE delivery for orders over HK$250.00
In Stock
- Plus 10 unit(s) shipping from 30 March 2026
- Plus 10 unit(s) shipping from 06 April 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 40 | HK$10.84 | HK$108.40 |
| 50 - 90 | HK$10.56 | HK$105.60 |
| 100 - 240 | HK$10.30 | HK$103.00 |
| 250 - 490 | HK$10.05 | HK$100.50 |
| 500 + | HK$9.79 | HK$97.90 |
*price indicative
- RS Stock No.:
- 125-0531
- Mfr. Part No.:
- TK10A50W,S5X(M
- Manufacturer:
- Toshiba
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Toshiba | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 9.7A | |
| Maximum Drain Source Voltage Vds | 500V | |
| Package Type | TO-220 | |
| Series | DTMOSIV | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 380mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | -1.7V | |
| Maximum Power Dissipation Pd | 30W | |
| Typical Gate Charge Qg @ Vgs | 20nC | |
| Maximum Operating Temperature | 150°C | |
| Height | 15mm | |
| Standards/Approvals | No | |
| Length | 10mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Toshiba | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 9.7A | ||
Maximum Drain Source Voltage Vds 500V | ||
Package Type TO-220 | ||
Series DTMOSIV | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 380mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf -1.7V | ||
Maximum Power Dissipation Pd 30W | ||
Typical Gate Charge Qg @ Vgs 20nC | ||
Maximum Operating Temperature 150°C | ||
Height 15mm | ||
Standards/Approvals No | ||
Length 10mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- JP
MOSFET Transistors, Toshiba
Related links
- Toshiba DTMOSIV Type N-Channel MOSFET 600 V EnhancementS4VX(M
- Toshiba DTMOSIV Type N-Channel MOSFET 650 V EnhancementS5X(M
- Toshiba DTMOSIV Type N-Channel MOSFET 650 V EnhancementS5X(M
- Toshiba DTMOSIV Type N-Channel MOSFET 600 V EnhancementS5X(M
- Toshiba DTMOSIV Type N-Channel MOSFET 500 V EnhancementS5X(M
- Toshiba DTMOSIV Type N-Channel MOSFET 600 V EnhancementS4VX(M
- Toshiba DTMOSIV Type N-Channel MOSFET 800 V EnhancementS4X(S
- Toshiba DTMOSIV Type N-Channel MOSFET 600 V EnhancementS1X(S