Vishay SQ N-Channel MOSFET, 130 A, 40 V N, 8-Pin PowerPAK SO-8L SQJ144EP-T1_BE3
- RS Stock No.:
- 878-896
- Mfr. Part No.:
- SQJ144EP-T1_BE3
- Manufacturer:
- Vishay
N
The image is for reference only, please refer to product details and specifications
Bulk discount available
View bulk pricing optionsSubtotal (1 tape of 1 unit)*
HK$8.71
FREE delivery for orders over HK$250.00
Temporarily out of stock
- Shipping from 22 February 2027
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Tape(s) | Per Tape |
|---|---|
| 1 - 24 | HK$8.71 |
| 25 - 99 | HK$5.70 |
| 100 - 499 | HK$3.35 |
| 500 + | HK$3.24 |
*price indicative
- RS Stock No.:
- 878-896
- Mfr. Part No.:
- SQJ144EP-T1_BE3
- Manufacturer:
- Vishay
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 130A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | PowerPAK SO-8L | |
| Series | SQ | |
| Mount Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.0046Ω | |
| Channel Mode | N | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.1V | |
| Typical Gate Charge Qg @ Vgs | 26nC | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Power Dissipation Pd | 148W | |
| Maximum Operating Temperature | 175°C | |
| Length | 5mm | |
| Standards/Approvals | RoHS | |
| Width | 6.25mm | |
| Height | 1.1mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 130A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type PowerPAK SO-8L | ||
Series SQ | ||
Mount Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.0046Ω | ||
Channel Mode N | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.1V | ||
Typical Gate Charge Qg @ Vgs 26nC | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Power Dissipation Pd 148W | ||
Maximum Operating Temperature 175°C | ||
Length 5mm | ||
Standards/Approvals RoHS | ||
Width 6.25mm | ||
Height 1.1mm | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- TW
The Vishay automotive N-Channel MOSFET designed for high-performance switching applications, offering robust capabilities for various demanding environments. With a Compact PowerPAK SO-8L package, it ensures efficient power management.
TrenchFET Gen IV technology optimises switching characteristics
AEC-Q101 qualified for automotive reliability and performance
100% R and UIS tested for enhanced durability
Minimum on-state drain-source resistance of 0.0046 Ohm at 10 V
High continuous drain current rating of up to 130 A
Related links
- Vishay SQ N channel-Channel MOSFET 40 V N, 8-Pin PowerPAK SO-8L SQJ138EP-T1_NE3
- Vishay TrenchFET N channel-Channel MOSFET 40 V Enhancement, 4-Pin PowerPAK SO-8L SQJ742EP-T1_GE3
- Vishay TrenchFET N channel-Channel Automotive MOSFET 100 V MOSFET, 4-Pin PowerPAK SO-8L SQJ112EP-T1_GE3
- Vishay TrenchFET N channel-Channel Automotive MOSFET 80 V MOSFET, 4-Pin PowerPAK SO-8L SQJ183ELP-T1_GE3
- Vishay TrenchFET N channel-Channel MOSFET 40 V Enhancement, 4-Pin PowerPAK SO-8L SQJ746EP-T2_GE3
- Vishay TrenchFET N channel-Channel MOSFET 150 V Enhancement, 4-Pin PowerPAK SO-8L SQJ742ELP-T1_GE3
- Vishay TrenchFET N channel-Channel Automotive MOSFET 100 V MOSFET, 8-Pin PowerPAK SO-8L SQJ114EP-T1_GE3
- Vishay TrenchFET N channel-Channel Power MOSFET 60 V Enhancement Mode, 8-Pin PowerPAK SQJA36EP-T1_BE3