Vishay TrenchFET N channel-Channel Automotive MOSFET, 49 A, 80 V MOSFET, 4-Pin PowerPAK SO-8L SQJ183ELP-T1_GE3
- RS Stock No.:
- 790-424
- Mfr. Part No.:
- SQJ183ELP-T1_GE3
- Manufacturer:
- Vishay
N
Bulk discount available
View bulk pricing optionsSubtotal (1 tape of 10 units)*
HK$111.00
FREE delivery for orders over HK$250.00
Temporarily out of stock
- Shipping from 15 April 2027
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tape* |
|---|---|---|
| 10 - 90 | HK$11.10 | HK$111.00 |
| 100 - 490 | HK$6.88 | HK$68.80 |
| 500 - 990 | HK$5.33 | HK$53.30 |
| 1000 + | HK$5.17 | HK$51.70 |
*price indicative
- RS Stock No.:
- 790-424
- Mfr. Part No.:
- SQJ183ELP-T1_GE3
- Manufacturer:
- Vishay
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | N channel | |
| Product Type | Automotive MOSFET | |
| Maximum Continuous Drain Current Id | 49A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Package Type | PowerPAK SO-8L | |
| Series | TrenchFET | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 0.0295Ω | |
| Channel Mode | MOSFET | |
| Typical Gate Charge Qg @ Vgs | 31nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 147W | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | AEC-Q101 | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type N channel | ||
Product Type Automotive MOSFET | ||
Maximum Continuous Drain Current Id 49A | ||
Maximum Drain Source Voltage Vds 80V | ||
Package Type PowerPAK SO-8L | ||
Series TrenchFET | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 0.0295Ω | ||
Channel Mode MOSFET | ||
Typical Gate Charge Qg @ Vgs 31nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 147W | ||
Maximum Gate Source Voltage Vgs 20V | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals AEC-Q101 | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- CN
The Vishay Automotive N-Channel MOSFET delivers superior performance as a power switching device. It is designed for high-efficiency applications, offering excellent thermal performance and drive capabilities.
TrenchFET technology ensures lower on-state resistance
AEC Q101 qualified for automotive reliability
Comprehensive thermal resistance ratings enhance heat dissipation
Single Pulse avalanche current rating maximises durability
Related links
- Vishay TrenchFET N channel-Channel Automotive MOSFET 100 V MOSFET, 4-Pin PowerPAK SO-8L SQJ112EP-T1_GE3
- Vishay TrenchFET N channel-Channel Automotive MOSFET 100 V MOSFET, 8-Pin PowerPAK SO-8L SQJ114EP-T1_GE3
- Vishay TrenchFET Dual N-Channel Automotive MOSFET 60 V MOSFET, 4-Pin PowerPAK SO-8L SQJ768ELP-T1_GE3
- Vishay TrenchFET N channel-Channel Automotive MOSFET 200 V MOSFET, 8-Pin PowerPAK 8 x 8 SQJQ190E-T1_GE3
- Vishay TrenchFET P-Channel Automotive MOSFET 30 V MOSFET, 8-Pin PowerPAK 1212-8SLW SQS135ELNW-T1_GE3
- Vishay TrenchFET P-Channel Automotive MOSFET 60 V MOSFET, 8-Pin SO-8 SQ4961CEY-T1_GE3
- Vishay TrenchFET N channel-Channel MOSFET 40 V Enhancement, 4-Pin PowerPAK SO-8L SQJ742EP-T1_GE3
- Vishay TrenchFET N channel-Channel MOSFET 150 V Enhancement, 4-Pin PowerPAK SO-8L SQJ742ELP-T1_GE3