Vishay TrenchFET N channel-Channel Power MOSFET, 40 A, 80 V N, 8-Pin SO-8 SIDR178DP-T1-RE3
- RS Stock No.:
- 851-501
- Mfr. Part No.:
- SIDR178DP-T1-RE3
- Manufacturer:
- Vishay
N
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Tape(s) | Per Tape |
|---|---|
| 1 - 9 | HK$27.81 |
| 10 - 24 | HK$18.09 |
| 25 - 99 | HK$10.72 |
| 100 - 499 | HK$10.50 |
| 500 + | HK$10.16 |
*price indicative
- RS Stock No.:
- 851-501
- Mfr. Part No.:
- SIDR178DP-T1-RE3
- Manufacturer:
- Vishay
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | Power MOSFET | |
| Channel Type | N channel | |
| Maximum Continuous Drain Current Id | 40A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Series | TrenchFET | |
| Package Type | SO-8 | |
| Mount Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.0029Ω | |
| Channel Mode | N | |
| Typical Gate Charge Qg @ Vgs | 105nC | |
| Maximum Power Dissipation Pd | 375W | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Minimum Operating Temperature | 55°C | |
| Maximum Operating Temperature | 175°C | |
| Length | 6.05mm | |
| Height | 1.04mm | |
| Width | 5.25mm | |
| Standards/Approvals | AEC-Q101 Qualified | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type Power MOSFET | ||
Channel Type N channel | ||
Maximum Continuous Drain Current Id 40A | ||
Maximum Drain Source Voltage Vds 80V | ||
Series TrenchFET | ||
Package Type SO-8 | ||
Mount Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.0029Ω | ||
Channel Mode N | ||
Typical Gate Charge Qg @ Vgs 105nC | ||
Maximum Power Dissipation Pd 375W | ||
Maximum Gate Source Voltage Vgs 20V | ||
Minimum Operating Temperature 55°C | ||
Maximum Operating Temperature 175°C | ||
Length 6.05mm | ||
Height 1.04mm | ||
Width 5.25mm | ||
Standards/Approvals AEC-Q101 Qualified | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- TW
The Vishay high-performance N-Channel MOSFET, designed to enable efficient power switching applications. Its capabilities ensure reliable operation within varying voltage and current ranges.
TrenchFET technology ensures low on-resistance and high efficiency
Top side cooling improves thermal transfer capabilities
Lead-free and halogen-free construction supports environmental compliance
Fully tested for reliability with 100% R and UIS tests
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