Vishay TrenchFET N channel-Channel Power MOSFET, 20 A, 250 V N, 8-Pin PowerPAK SIR692DP-T1-BE3
- RS Stock No.:
- 851-504
- Mfr. Part No.:
- SIR692DP-T1-BE3
- Manufacturer:
- Vishay
N
Bulk discount available
View bulk pricing optionsSubtotal (1 tape of 1 unit)*
HK$18.98
FREE delivery for orders over HK$250.00
Temporarily out of stock
- Shipping from 20 August 2027
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Tape(s) | Per Tape |
|---|---|
| 1 - 9 | HK$18.98 |
| 10 - 24 | HK$12.40 |
| 25 - 99 | HK$7.37 |
| 100 - 499 | HK$7.15 |
| 500 + | HK$7.04 |
*price indicative
- RS Stock No.:
- 851-504
- Mfr. Part No.:
- SIR692DP-T1-BE3
- Manufacturer:
- Vishay
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | Power MOSFET | |
| Channel Type | N channel | |
| Maximum Continuous Drain Current Id | 20A | |
| Maximum Drain Source Voltage Vds | 250V | |
| Series | TrenchFET | |
| Package Type | PowerPAK | |
| Mount Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.067Ω | |
| Channel Mode | N | |
| Typical Gate Charge Qg @ Vgs | 25.3nC | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 104W | |
| Maximum Operating Temperature | 175°C | |
| Height | 1.04mm | |
| Length | 6.05mm | |
| Standards/Approvals | AEC-Q101 Qualified | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type Power MOSFET | ||
Channel Type N channel | ||
Maximum Continuous Drain Current Id 20A | ||
Maximum Drain Source Voltage Vds 250V | ||
Series TrenchFET | ||
Package Type PowerPAK | ||
Mount Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.067Ω | ||
Channel Mode N | ||
Typical Gate Charge Qg @ Vgs 25.3nC | ||
Maximum Gate Source Voltage Vgs 20V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 104W | ||
Maximum Operating Temperature 175°C | ||
Height 1.04mm | ||
Length 6.05mm | ||
Standards/Approvals AEC-Q101 Qualified | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- DE
The Vishay high-performance MOSFET designed for efficient power management in various electronic systems, ensuring reliability and precision in switching applications.
Utilises ThunderFET technology for optimal RDS(on), Qg, Qsw, and Qoss balancing
Guaranteed 100% Rg and UIS tested for enhanced reliability
Supports a maximum drain-source voltage of 250V
Minimal on-resistance of 0.063Ω at VGS of 10V ensures low power loss
Related links
- Vishay TrenchFET N channel-Channel Power MOSFET 60 V N, 8-Pin PowerPAK SIR692DP-T1-UE3
- Vishay TrenchFET N channel-Channel Power MOSFET 80 V N, 8-Pin PowerPAK SIR178DP-T1-BE3
- Vishay TrenchFET N channel-Channel Power MOSFET 70 V N, 8-Pin PowerPAK SISS178LDN-T1-BE3
- Vishay TrenchFET N channel-Channel Power MOSFET 70 V N, 8-Pin PowerPAK SISS176LDN-T1-BE3
- Vishay TrenchFET N channel-Channel Power MOSFET 60 V N, 8-Pin PowerPAK SIHH150N60E-T1-FE3
- Vishay TrenchFET N channel-Channel Power MOSFET 80 V N, 8-Pin PowerPAK SIR178DP-T1-UE3
- Vishay SI34 N channel-Channel Power MOSFET -20 V P, 8-Pin PowerPAK SI3493DDV-T1-BE3
- Vishay TrenchFET N channel-Channel Power MOSFET 80 V N, 8-Pin PowerPAK SIRS5800LEPW-T1RE3