Vishay SQM P-Channel Single MOSFETs, -93 A, -100 V Enhancement Mode, 3-Pin TO-263 SQM100P10-19L_NE3
- RS Stock No.:
- 829-357
- Mfr. Part No.:
- SQM100P10-19L_NE3
- Manufacturer:
- Vishay
N
Bulk discount available
View bulk pricing optionsSubtotal (1 unit)*
HK$39.98
FREE delivery for orders over HK$250.00
Temporarily out of stock
- Shipping from 22 January 2027
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 1 - 9 | HK$39.98 |
| 10 - 49 | HK$24.79 |
| 50 - 99 | HK$15.08 |
| 100 + | HK$14.63 |
*price indicative
- RS Stock No.:
- 829-357
- Mfr. Part No.:
- SQM100P10-19L_NE3
- Manufacturer:
- Vishay
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | P-Channel | |
| Product Type | Single MOSFETs | |
| Maximum Continuous Drain Current Id | -93A | |
| Maximum Drain Source Voltage Vds | -100V | |
| Package Type | TO-263 | |
| Series | SQM | |
| Mount Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.0190Ω | |
| Channel Mode | Enhancement Mode | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Typical Gate Charge Qg @ Vgs | 124nC | |
| Maximum Power Dissipation Pd | 375W | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.5V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS Compliant | |
| Length | 10.16mm | |
| Width | 10.28mm | |
| Height | 4.57mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type P-Channel | ||
Product Type Single MOSFETs | ||
Maximum Continuous Drain Current Id -93A | ||
Maximum Drain Source Voltage Vds -100V | ||
Package Type TO-263 | ||
Series SQM | ||
Mount Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.0190Ω | ||
Channel Mode Enhancement Mode | ||
Maximum Gate Source Voltage Vgs 20V | ||
Typical Gate Charge Qg @ Vgs 124nC | ||
Maximum Power Dissipation Pd 375W | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.5V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS Compliant | ||
Length 10.16mm | ||
Width 10.28mm | ||
Height 4.57mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- GB
The Vishay power MOSFET designed for automotive applications, offering efficient performance and high reliability. Its Advanced TrenchFET technology ensures optimal thermal management and effective switching capabilities.
TrenchFET technology enhances efficiency and thermal performance
Rated for a Drain-Source Voltage of -100 V, ensuring robust operation
Package designed for low thermal resistance for better heat dissipation
Tests show 100% R and UIS validation for high reliability
Related links
- Vishay SQM P-Channel Single MOSFETs -40 V Enhancement Mode, 3-Pin TO-263 SQM120P04-04L_NE3
- Vishay SI P-Channel Single MOSFETs -60 V Enhancement Mode, 3-Pin TO-263 SQM120P06-07L_NE3
- Vishay SQD P-Channel Single MOSFETs 40 V Enhancement Mode, 3-Pin TO-252 SQD50P04-13L_NE3
- Vishay SQD P-Channel Single MOSFETs -60 V Enhancement Mode, 3-Pin TO-252 SQD50P06-15L_NE3
- Vishay SQ P-Channel Single MOSFETs 30 V Enhancement Mode, 6-Pin TSOP-6 SQ3457CEV-T1_GE3
- Vishay SQJ P-Channel Single MOSFETs -60 V Enhancement Mode, 8-Pin P SQJ457EP-T1_NE3
- Vishay TrenchFET P-Channel Single MOSFETs -30 V Enhancement Mode, 4-Pin MICRO FOOT SI8409ADB-T1-E1
- Microchip APT N channel-Channel Single MOSFETs 600 V Enhancement Mode, 3-Pin TO-247 APT40N60BC7