Vishay SQD P-Channel Single MOSFETs, 50 A, 40 V Enhancement Mode, 3-Pin TO-252 SQD50P04-13L_NE3
- RS Stock No.:
- 829-350
- Mfr. Part No.:
- SQD50P04-13L_NE3
- Manufacturer:
- Vishay
N
Bulk discount available
View bulk pricing optionsSubtotal (1 unit)*
HK$14.85
FREE delivery for orders over HK$250.00
Temporarily out of stock
- Shipping from 22 January 2027
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 1 - 9 | HK$14.85 |
| 10 - 24 | HK$9.60 |
| 25 - 99 | HK$5.70 |
| 100 - 499 | HK$5.58 |
| 500 + | HK$5.47 |
*price indicative
- RS Stock No.:
- 829-350
- Mfr. Part No.:
- SQD50P04-13L_NE3
- Manufacturer:
- Vishay
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | P-Channel | |
| Product Type | Single MOSFETs | |
| Maximum Continuous Drain Current Id | 50A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | SQD | |
| Package Type | TO-252 | |
| Mount Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.013Ω | |
| Channel Mode | Enhancement Mode | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Typical Gate Charge Qg @ Vgs | 60nC | |
| Forward Voltage Vf | 1.5V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 136W | |
| Maximum Operating Temperature | 175°C | |
| Length | 6.10mm | |
| Width | 6.50mm | |
| Standards/Approvals | RoHS Compliant | |
| Height | 2.30mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type P-Channel | ||
Product Type Single MOSFETs | ||
Maximum Continuous Drain Current Id 50A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series SQD | ||
Package Type TO-252 | ||
Mount Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.013Ω | ||
Channel Mode Enhancement Mode | ||
Maximum Gate Source Voltage Vgs 20V | ||
Typical Gate Charge Qg @ Vgs 60nC | ||
Forward Voltage Vf 1.5V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 136W | ||
Maximum Operating Temperature 175°C | ||
Length 6.10mm | ||
Width 6.50mm | ||
Standards/Approvals RoHS Compliant | ||
Height 2.30mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- GB
The Vishay power MOSFET provides high-performance switching capabilities, specifically designed for automotive applications, ensuring reliability and efficiency under demanding conditions.
TrenchFET technology enhances power efficiency
Low thermal resistance enables effective heat management
Robust AEC-Q101 qualification assures high-quality performance
100% Rg and UIS tested for reliability in operation
Related links
- Vishay SQD P-Channel Single MOSFETs -60 V Enhancement Mode, 3-Pin TO-252 SQD50P06-15L_NE3
- Vishay SQM P-Channel Single MOSFETs -100 V Enhancement Mode, 3-Pin TO-263 SQM100P10-19L_NE3
- Vishay SI P-Channel Single MOSFETs -60 V Enhancement Mode, 3-Pin TO-263 SQM120P06-07L_NE3
- Vishay SQM P-Channel Single MOSFETs -40 V Enhancement Mode, 3-Pin TO-263 SQM120P04-04L_NE3
- Microchip APT N channel-Channel Single MOSFETs 600 V Enhancement Mode, 3-Pin TO-247 APT40N60BC7
- Microchip APT N channel-Channel Single MOSFETs 600 V Enhancement Mode, 3-Pin TO-247 APT100N60BC7
- Microchip TP2104 N-Channel Vertical DMOS FET-Channel Single MOSFETs 40 V Enhancement Mode, 3-Pin TO-92-3
- Microchip VN2210 N-Channel Vertical DMOS FET-Channel Single MOSFETs 90 V Enhancement Mode, 3-Pin TO-92-3
