Vishay TrenchFET P-Channel MOSFET, -136.7 A, -20 V Enhancement, 8-Pin PowerPAK SO-8 SIR5207DP-T1-UE3

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HK$7.72

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1 - 24HK$7.72
25 - 99HK$5.14
100 - 499HK$2.68
500 +HK$2.57

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RS Stock No.:
735-202
Mfr. Part No.:
SIR5207DP-T1-UE3
Manufacturer:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

P-Channel

Maximum Continuous Drain Current Id

-136.7A

Maximum Drain Source Voltage Vds

-20V

Package Type

PowerPAK SO-8

Series

TrenchFET

Mount Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance Rds

0.0042Ω

Channel Mode

Enhancement

Maximum Power Dissipation Pd

65.7W

Maximum Gate Source Voltage Vgs

±12 V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

139nC

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS Compliant

Width

5.26 mm

Length

6.25mm

Height

1.12mm

Automotive Standard

No

COO (Country of Origin):
CN

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