Vishay TrenchFET N channel-Channel MOSFET, 59 A, 100 V Enhancement, 8-Pin PowerPAK 1212-8S SISS516DN-T1-UE3

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HK$13.42

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10 - 24HK$8.72
25 - 99HK$4.58
100 - 499HK$4.47
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RS Stock No.:
735-241
Mfr. Part No.:
SISS516DN-T1-UE3
Manufacturer:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

N channel

Maximum Continuous Drain Current Id

59A

Maximum Drain Source Voltage Vds

100V

Series

TrenchFET

Package Type

PowerPAK 1212-8S

Mount Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance Rds

0.011Ω

Channel Mode

Enhancement

Maximum Power Dissipation Pd

65.7W

Maximum Gate Source Voltage Vgs

±20 V

Typical Gate Charge Qg @ Vgs

18.3nC

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Width

3.3 mm

Standards/Approvals

RoHS Compliant

Length

3.3mm

Automotive Standard

No

COO (Country of Origin):
DE
The Vishay N channel MOSFET is designed for efficient power switching in a wide range of electronic applications. it delivers reliable performance with thorough gate resistance and unclamped inductive switching testing, ensuring robust operation under demanding conditions. the device supports environmentally responsible designs with RoHS compliant and halogen free construction, making it suitable for modern power management systems.

Supports high reliability operation in demanding environments

Suitable for synchronous rectification applications

Ideal for use as a primary side switch in power converters

Meets RoHS compliant and halogen free requirements

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