Vishay TrenchFET N channel-Channel MOSFET, 201.5 A, 40 V Enhancement, 8-Pin PowerPAK SO-8 SIR5402DP-T1-UE3

N

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RS Stock No.:
735-264
Mfr. Part No.:
SIR5402DP-T1-UE3
Manufacturer:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

N channel

Maximum Continuous Drain Current Id

201.5A

Maximum Drain Source Voltage Vds

40V

Series

TrenchFET

Package Type

PowerPAK SO-8

Mount Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance Rds

0.0017Ω

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

82nC

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

92.5W

Maximum Gate Source Voltage Vgs

±20 V

Maximum Operating Temperature

150°C

Width

5.26 mm

Height

1.12mm

Standards/Approvals

RoHS Compliant

Length

6.25mm

Automotive Standard

No

COO (Country of Origin):
IL
The Vishay N channel MOSFET is built for high-efficiency power conversion and control in demanding electronic systems. it ensures robust performance with comprehensive testing, while maintaining compliance with environmental standards. its versatility makes it Ideal for applications requiring reliable rectification, Compact dc/dc solutions, and precise motor drive control.

Provides 100% Rg and UIS testing for proven reliability

Ensures RoHS compliance for environmental safety

Delivers halogen-free construction for eco-friendly design

Supports synchronous rectification for efficient power conversion

Enables motor drive control with dependable switching performance

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