Infineon OptiMOS 5 N-Channel Power MOSFET, 87 A, 150 V Enhancement, 8-Pin PG-TDSON-8 BSC088N15LS5ATMA1
- RS Stock No.:
- 349-395
- Mfr. Part No.:
- BSC088N15LS5ATMA1
- Manufacturer:
- Infineon
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- RS Stock No.:
- 349-395
- Mfr. Part No.:
- BSC088N15LS5ATMA1
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | Power MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 87A | |
| Maximum Drain Source Voltage Vds | 150V | |
| Package Type | PG-TDSON-8 | |
| Series | OptiMOS 5 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 8.8mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Typical Gate Charge Qg @ Vgs | 40nC | |
| Forward Voltage Vf | 1.20V | |
| Maximum Power Dissipation Pd | 139W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | DIN IEC 68-1: 55/175/56, IEC61249-2-21, RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type Power MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 87A | ||
Maximum Drain Source Voltage Vds 150V | ||
Package Type PG-TDSON-8 | ||
Series OptiMOS 5 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 8.8mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20V | ||
Typical Gate Charge Qg @ Vgs 40nC | ||
Forward Voltage Vf 1.20V | ||
Maximum Power Dissipation Pd 139W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals DIN IEC 68-1: 55/175/56, IEC61249-2-21, RoHS | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
Infineon OptiMOS 5 Series Power MOSFET, 150V Maximum Drain-Source Voltage, 139W Maximum Power Dissipation - BSC088N15LS5ATMA1
This power MOSFET is a surface-mount N‑channel enhancement device designed for high-current switching and power conversion tasks. It operates across a wide temperature range and is suited to applications requiring efficient conduction at elevated voltages. The device includes gate protection and complies with recognised material and temperature endurance standards while meeting RoHS requirements.
Features and Benefits:
• 8.8mΩ RDS(on) reduces conduction losses and improves efficiency
• 87A continuous drain current supports high-current designs
• 1.20V forward voltage lowers on-state voltage drop
• 40 nC typical gate charge enables Rapid switching transitions
• 20V gate-source limit provides robust gate protection
• 87A continuous drain current supports high-current designs
• 1.20V forward voltage lowers on-state voltage drop
• 40 nC typical gate charge enables Rapid switching transitions
• 20V gate-source limit provides robust gate protection
Applications
• Suitable for high-power DC-DC converters in industrial equipment
• Used with motor drivers requiring sustained high current
• Ideal for switch‑mode power supplies in telecoms systems
• Can be used for battery management and power distribution
• Suitable for high-power low-loss switching in inverters
• Used with motor drivers requiring sustained high current
• Ideal for switch‑mode power supplies in telecoms systems
• Can be used for battery management and power distribution
• Suitable for high-power low-loss switching in inverters
What thermal endurance does it offer under continuous operation?
It is rated to operate from -55°C up to 150°C, providing broad thermal headroom for demanding environments.
Which package and mounting style support Compact assemblies?
The PG‑TDSON‑8 package is intended for surface‑mount placement to enable space‑efficient board layouts.
What standards and material constraints apply to its manufacture?
The device meets DIN IEC 68‑1:55/175/56, IEC 61249‑2‑21 and is RoHS compliant.
How does the device behave in terms of switching performance?
With a typical gate charge of 40 nC and enhancement‑channel operation, it supports fast gate transitions for efficient switching.
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