Infineon OptiMOSTM Type N-Channel Power MOSFET, 100 A, 30 V Enhancement, 8-Pin PG-TDSON-8 ISC011N03L5SATMA1

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Subtotal (1 reel of 5000 units)*

HK$31,800.00

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5000 +HK$6.36HK$31,800.00

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RS Stock No.:
273-2813
Mfr. Part No.:
ISC011N03L5SATMA1
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

Power MOSFET

Maximum Continuous Drain Current Id

100A

Maximum Drain Source Voltage Vds

30V

Series

OptiMOSTM

Package Type

PG-TDSON-8

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

1.1mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

72nC

Forward Voltage Vf

1V

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

96W

Maximum Operating Temperature

150°C

Standards/Approvals

JEDEC, IEC61249-2-21, RoHS

Automotive Standard

No

The Infineon MOSFET is a N channel MOSFET and optimized for high performance buck converter. This MOSFET is qualified according to JEDEC standard and halogen free according to IEC61249 2 21.

RoHS compliant

Pb free lead plating

Very low on resistance

Superior thermal resistance

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